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MJ15022G PDF预览

MJ15022G

更新时间: 2024-11-04 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 74K
描述
Silicon Power Transistors

MJ15022G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-3包装说明:ROHS COMPLIANT, CASE 1-07, TO-3, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:1.34外壳连接:COLLECTOR
最大集电极电流 (IC):16 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):5
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):250 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

MJ15022G 数据手册

 浏览型号MJ15022G的Datasheet PDF文件第2页浏览型号MJ15022G的Datasheet PDF文件第3页浏览型号MJ15022G的Datasheet PDF文件第4页 
NPN − MJ15022, MJ15024*  
*MJ15024 is a Preferred Device  
Silicon Power Transistors  
The MJ15022 and MJ15024 are PowerBase power transistors  
designed for high power audio, disk head positioners and other linear  
applications.  
Features  
http://onsemi.com  
High Safe Operating Area (100% Tested) − 2 A @ 80 V  
High DC Current Gain − h = 15 (Min) @ I = 8 Adc  
FE  
C
16 AMPERES  
SILICON POWER TRANSISTORS  
200 − 250 VOLTS, 250 WATTS  
Pb−Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
MJ15022  
V
CEO  
Vdc  
200  
250  
MJ15024  
Collector−Base Voltage  
MJ15022  
V
CBO  
Vdc  
350  
400  
MJ15024  
Emitter−Base Voltage  
V
5
Vdc  
Vdc  
Adc  
EBO  
TO−204AA (TO−3)  
CASE 1−07  
Collector−Emitter Voltage  
V
CEX  
400  
STYLE 1  
Collector Current − Continuous  
− Peak (Note 1)  
I
C
16  
30  
MARKING DIAGRAM  
Base Current − Continuous  
I
B
5
Adc  
Total Device Dissipation @ T = 25_C  
P
250  
1.43  
W
W/_C  
_C  
C
D
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to +200  
stg  
MJ1502xG  
AYWW  
MEX  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
R
0.70  
_C/W  
q
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJ1502x = Device Code  
x = 2 or 4  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.  
WW  
MEX  
= Work Week  
= Country of Origin  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MJ15022  
MJ15022G  
TO−204  
100 Units / Tray  
100 Units / Tray  
TO−204  
(Pb−Free)  
MJ15024  
TO−204  
100 Units / Tray  
100 Units / Tray  
MJ15024G  
TO−204  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 10  
MJ15022/D  
 

MJ15022G 替代型号

型号 品牌 替代类型 描述 数据表
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