Datasheet > MIE-324A4

MIE-324A4

更新时间： 2024-02-02 08:03:37

品牌	Logo	应用领域
东贝光电 - UOT		二极管高功率电源
页数	文件大小	规格书
2页	36K
描述
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE

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MIE-324A4 数据手册

AlGaAs/GaAs HIGH POWER T-1 PACKAGE

INFRARED EMITTING DIODE

MIE-324A4

Description

Package Dimensions

The MIE-324A4 is a high power infrared eimtting

diode in GaAs technology with AlGaAs window

coating molded in water clear plastic package.

Unit : mm (inches )

f 3.55±0.25

(.140±.010)

f 3.10±0.20

(.122±.008)

4.28±0.20

(.169±.008)

5.28±0.30

3.85

(.208±.012)

(.152)

SEE NOTE 2

23.40MIN.

(.920)

Features

l High radiant power and high radiant intensity

l Suitable ror DC and high pulse current operation

l Standard T-1 ( f 3mm) package, radiation angle: 40°

l Peak wavelength l p = 940 nm

0.50 TYP.

(.020)

1.00MIN.

(.039)

2.54NOM.

(.100)

l Good spectral matching to si-photodetector

SEE NOTE 3

Notes :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

@ T_A=25^oC

Parameter

Power Dissipation

Maximum Rating

Unit

120

Peak Forward Current(300pps,10ms pulse)

Continuos Forward Current

Reverse Voltage

100

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

02/04/2002

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