Datasheet > MIE-304A4

MIE-304A4

更新时间： 2024-02-11 18:48:55

品牌	Logo	应用领域
东贝光电 - UOT		二极管高功率电源
页数	文件大小	规格书
2页	35K
描述
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE

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MIE-304A4 数据手册

AlGaAs/GaAs HIGH POWER T-1 PACKAGE

INFRARED EMITTING DIODE

MIE-304A4

Description

Package Dimensions

The MIE-304A4 is a high power infrared eimtting

diode in GaAs technology with AlGaAs window

coating molded in water clear plastic package.

Unit: mm (inches)

3.00

(.118)

5.25

1.00

(.207)

4.00

(.039)

(.158)

SEE NOTE 2

0.80±0.50

(.032±.020)

FLAT DENOTES CATHODE

23.40MIN.

(.921)

Features

lHigh radiant power and high radiant intensity

lSuitable for DC and high pulse current operation

lStandard T-1 ( f 3mm) package, radiation angle: 25°

lPeak wavelength l p = 940 nm

0.50 TYP.

(.020)

1.00 MIN.

(.040)

2.54 NOM.

(.100)

SEE NOTE 3

l Good spectral matching to Si-Photodetector

Notes :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 0.8 mm (.031") max.

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

@ T_A=25^oC

Parameter

Power Dissipation

Maximum Rating

Unit

120

Peak Forward Current

Continuous Forward Current

Reverse Voltage

100

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

02/04/2002

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