Datasheet > MIE-144G1

MIE-144G1

更新时间： 2024-11-06 22:15:19

品牌	Logo	应用领域
东贝光电 - UOT		二极管
页数	文件大小	规格书
2页	34K
描述
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE

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MIE-144G1 数据手册

GaAs SIDE LOOK PACKAGE

INFRARED EMITTING DIODE

MIE-144G1

Description

Package Dimensions

Unit: mm( inches

The MIE-144G1 is a GaAs infrared emitting diode

molded in clear , lensed side looking package .

The MIE-144G1 provides a broad range of

intensity selection .

1.50

(.059)

1.10

4.00±0.08

(.043)

(.156±.003)

0.75

1.80

(.071)

f 1.50

(.030)

(.059)

1.22

(.048)

4.12

(.162)

1.66±0.08

(.065±.003)

60°

0.80

(.032)

2- 0.5TYP.

(.020)

14.30MIN.

(.563)

Features

Selected to specific on-line intensity and

radiant intensity ranges

1.0MIN.

(.039)

2.54±0.08

Low cost , plastic side looking package

(.100±.003)

(SEE NOTE 3)

l Mechanically and spectrally matched to

The MID-14422 of phototransistor .

Notes :

1. All dimensions are in millimeters.(inches).

2. Protruded resin under flange is 1.5 mm (0.059") max.

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

@ T_A=25^oC

Parameter

Power Dissipation

Maximum Rating

Unit

Peak Forward Current

Continuos Forward Current

Reverse Voltage

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

02/04/2002

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