Datasheet > MIE-114G1

MIE-114G1

更新时间： 2024-02-06 11:25:15

品牌	Logo	应用领域
东贝光电 - UOT		二极管
页数	文件大小	规格书
2页	33K
描述
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE

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MIE-114G1 数据手册

GaAs SIDE LOOK PACKAGE

INFRARED EMITTING DIODE

MIE-114G1

Description

Package Dimensions

Unit: mm ( inches )

The MIE-114G1 is a GaAs infrared emitting diode

molded in clear , lensed side looking package .

The MIE-114G1 provides a broad range of

intensity selection .

4.45±0.20

(.175±.008)

2.22

0.76±0.10

(.087)

(.030±.008)

1.22±0.10

(.048±.004)

1.55±0.02

(.061±.008)

5.72±0.20

(.225±.008)

12.70 MIN.

(.500)

Features

0.50 TYP.

(.020)

1.00 MIN.

l Selected to specific on-line intensity and

(.040)

2.54 NOM.

(.100)

radiant intensity ranges

SEE NOTE 3

l Low cost, plastic side looking package

l Mechanically and spectrally matched to

The MID-11422 Phototransistor .

NOTES :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

@ T_A=25^oC

Parameter

Maximum Rating

Power Dissipation

Peak Forward Current

Continuos Forward Current

Reverse Voltage

-55^oC to + 100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

02/04/2002

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