Datasheet > MIE-134G2

MIE-134G2

更新时间： 2024-09-22 22:13:27

品牌	Logo	应用领域
东贝光电 - UOT		二极管
页数	文件大小	规格书
2页	42K
描述
GaAs/GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE

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MIE-134G2 数据手册

GaAs/GaAs SIDE LOOK PACKAGE

INFRARED EMITTING DIODE

MIE-134G2

Description

Package Dimensions

Unit: mm( inches )

The MIE-134G2 is a GaAs infrared emitting diode

molded in clear, lensed side looking package.

The MIE-134G2 provides a broad range of

intensity selection .

0.30max

(.012)

0.50max

(.020)

4.00±0.10

(.158±.004)

2.00±0.10

(.078±.004)

0.80±0.10

2.45±0.10

(.080±.004)

2.00max

(.078)

2.05

(.081)

(.032±.004)

R1.1

2.00±0.10

2.50±0.30

(.078±.004)

(.099±.012)

3.09±0.10

(.154±.004)

Features

3.00*0.5

5.10±0.10

(.118)

lSelected to specific on-line intensity and

radiant intensity ranges

(.200±.004)

l Low cost, plastic side looking package

1.25

(.049)

l Mechanically and spectrally matched to

(.049)

Pin # Name

Cathode

The MID-13A45 of phototransistor .

Anode

Open

NOTES :

1. All dimensions are in millimeters.

2. Tolerance is ± 0.25mm unless otherwise noted .

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

@ T_A=25^oC

Parameter

Maximum Rating

Unit

Power Dissipation

Peak Forward Current(300pps,10ms pulse)

Continuos Forward Current

Reverse Voltage

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

11/17/2000

中文翻译

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