5秒后页面跳转
MH32S72APHB-5 PDF预览

MH32S72APHB-5

更新时间: 2024-11-05 19:55:03
品牌 Logo 应用领域
三菱 - MITSUBISHI 时钟动态存储器内存集成电路
页数 文件大小 规格书
51页 664K
描述
Synchronous DRAM Module, 32MX72, 5.4ns, CMOS, DIMM-168

MH32S72APHB-5 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM, DIMM168针数:168
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.84
访问模式:DUAL BANK PAGE BURST最长访问时间:5.4 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMONJESD-30 代码:R-XDMA-N168
内存密度:2415919104 bit内存集成电路类型:SYNCHRONOUS DRAM MODULE
内存宽度:72功能数量:1
端口数量:1端子数量:168
字数:33554432 words字数代码:32000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32MX72
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIMM封装等效代码:DIMM168
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
电源:3.3 V认证状态:Not Qualified
刷新周期:4096自我刷新:YES
最大待机电流:0.018 A子类别:DRAMs
最大压摆率:2.88 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

MH32S72APHB-5 数据手册

 浏览型号MH32S72APHB-5的Datasheet PDF文件第2页浏览型号MH32S72APHB-5的Datasheet PDF文件第3页浏览型号MH32S72APHB-5的Datasheet PDF文件第4页浏览型号MH32S72APHB-5的Datasheet PDF文件第5页浏览型号MH32S72APHB-5的Datasheet PDF文件第6页浏览型号MH32S72APHB-5的Datasheet PDF文件第7页 
Preliminary Spec.  
MITSUBISHI LSIs  
Some contents are subject to change without notice.  
MH32S72APHB -5,-6,-7  
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM  
DESCRIPTION  
The MH32S72APHB is 33554432 - word by 72-bit  
Synchronous DRAM module. This consists of  
eighteen industry standard 16Mx8 Synchronous  
DRAMs in TSOP and one industory standard  
EEPROM in TSSOP.  
The mounting of TSOP on a card edge Dual  
Inline package provides any application where  
high densities and large quantities of memory are  
required.  
85pin  
1pin  
This is a socket type - memory modules, suitable  
for easy interchange or addition of modules.  
94pin  
95pin  
10pin  
11pin  
FEATURES  
CLK Access Time  
Frequency  
(Component SDRAM)  
-5  
-6  
5.4ns(CL=2)  
5.4ns(CL=3)  
133MHz  
133MHz  
-7  
6.0ns(CL=2)  
100MHz  
124pin  
125pin  
40pin  
41pin  
Utilizes industry standard 16M x 8 Sy nchronous DRAMs  
TSOP and industry standard EEPROM in TSSOP  
168-pin (84-pin dual in-line package)  
single 3.3V±0.3V power supply  
Max. Clock frequency -5,-6:133MHz,-7:100MHz  
Fully synchronous operation referenced to clock  
rising edge  
4 bank operation controlled by BA0,1(Bank Address)  
/CAS latency- 2/3(programmable)  
Burst length- 1/2/4/8/Full Page(programmable)  
Burst type- sequential / interleave(programmable)  
Column access - random  
84pin  
168pin  
Auto precharge / All bank precharge controlled by A10  
Auto refresh and Self refresh  
4096 refresh cycle /64ms  
LVTTL Interface  
Discrete IC and module design conform to  
PC100/PC133 specification.  
APPLICATION  
PC main memory  
MITSUBISHI  
26.Jul.2001  
MIT-DS-0380-0.2  
ELECTRIC  
( 1 / 51 )  

与MH32S72APHB-5相关器件

型号 品牌 获取价格 描述 数据表
MH32S72APHB-6 MITSUBISHI

获取价格

2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
MH32S72APHB-7 MITSUBISHI

获取价格

2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
MH32S72APHB-8 MITSUBISHI

获取价格

2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
MH32S72AQJA-7 MITSUBISHI

获取价格

2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72AQJA-8 MITSUBISHI

获取价格

2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72AVJA-5 MITSUBISHI

获取价格

Synchronous DRAM Module, 32MX72, 5.4ns, CMOS, DIMM-168
MH32S72AVJA-6 MITSUBISHI

获取价格

2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72BAFA-7 MITSUBISHI

获取价格

2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72BAFA-8 MITSUBISHI

获取价格

2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72BBFA-6 MITSUBISHI

获取价格

2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM