生命周期: | Obsolete | 零件包装代码: | DIMM |
包装说明: | DIMM, DIMM168 | 针数: | 168 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.36 | 风险等级: | 5.84 |
Is Samacsys: | N | 访问模式: | FOUR BANK PAGE BURST |
最长访问时间: | 8 ns | 其他特性: | AUTO/SELF REFRESH |
最大时钟频率 (fCLK): | 100 MHz | I/O 类型: | COMMON |
JESD-30 代码: | R-XDMA-N168 | 内存密度: | 2415919104 bit |
内存集成电路类型: | SYNCHRONOUS DRAM MODULE | 内存宽度: | 72 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 168 | 字数: | 33554432 words |
字数代码: | 32000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 32MX72 | 输出特性: | 3-STATE |
封装主体材料: | UNSPECIFIED | 封装代码: | DIMM |
封装等效代码: | DIMM168 | 封装形状: | RECTANGULAR |
封装形式: | MICROELECTRONIC ASSEMBLY | 电源: | 3.3 V |
认证状态: | Not Qualified | 刷新周期: | 4096 |
自我刷新: | YES | 最大待机电流: | 0.018 A |
子类别: | DRAMs | 最大压摆率: | 2.88 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | NO LEAD | 端子节距: | 1.27 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MH32S72PHB-6 | MITSUBISHI |
获取价格 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM | |
MH32S72PHB-7 | MITSUBISHI |
获取价格 |
2415919104-BIT (33554432 - WORD BY 72-BIT)SynchronousDRAM | |
MH32S72PHB-8 | MITSUBISHI |
获取价格 |
2415919104-BIT (33554432 - WORD BY 72-BIT)SynchronousDRAM | |
MH32S72PJA-7 | MITSUBISHI |
获取价格 |
Synchronous DRAM Module, 32MX72, 6ns, CMOS, PDMA168 | |
MH32S72PJA-8 | MITSUBISHI |
获取价格 |
Synchronous DRAM Module, 32MX72, 6ns, CMOS, PDMA168 | |
MH32S72QJA-7 | MITSUBISHI |
获取价格 |
2415919104-BIT ( 33554432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM | |
MH32S72QJA-8 | MITSUBISHI |
获取价格 |
2415919104-BIT ( 33554432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM | |
MH32S72VJA-6 | MITSUBISHI |
获取价格 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM | |
MH32TAD | MTRONPTI |
获取价格 |
8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator | |
MH32TAD01.5000MHZ | MTRONPTI |
获取价格 |
HCMOS/TTL Output Clock Oscillator, |