Datasheet > MGFS38E2325-01

MGFS38E2325-01

更新时间： 2024-01-15 20:41:19

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
21页	466K
描述
2.3 - 2.5GHz HBT MMIC MODULE

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技术参数
数据手册

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MGFS38E2325-01 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	SOLCC10,.16,34	Reach Compliance Code：	unknown
风险等级：	5.82	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	10
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	SOLCC10,.16,34
电源：	5 V	子类别：	RF/Microwave Amplifiers
表面贴装：	YES	技术：	GAAS
Base Number Matches：	1

MGFS38E2325-01 数据手册

Mitsubishi Semiconductors

MGFS38E2325-01

Specifications are subject to change without notice.

2.3 - 2.5GHz HBT MMIC MODULE

Outline Drawing

DESCRIPTION

DIM in mm

MGFS38E2325 is a GaAs RF amplifier designed

for WiMAX CPE.

1.0

4.0

FEATURES

• InGaP HBT Device

• 5V Operation

• 28.5dBm Linear Output Power (64QAM, EVM=2.5%)

• 36dB Linear Gain

• Integrated Output Power Detector

• Integrated 1-bit Step Attenuator

• Surface Mount Package

• RoHS Compliant Package

Vc1, Vcb

Vc2

Vc3

Vc4

Pout

Vdet

GND

Vref

APPLICATIONS

IEEE802.16-2004

IEEE802.16e-2005

GND

10 Vcont

X-ray Top View

FUNCTIONAL BLOCK DIAGRAM

Gain control

Pout

Vcont

(0V/3.3V)

Power

Detector

Vc1,Vcb

(5V)

Bias Circuit

Vdet

Detector Circuit

Vc3(5V)

Vc4(5V)

Vc2(5V) Vref(2.85V)

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always

the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of

substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.

MITSUBISHI ELECTRIC CORPORATION

Rev. 1.1

Sep. -2010

(1/21)

12 3 4 5 6 7...21

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