Datasheet > MGFS36E2527_10

MGFS36E2527_10

更新时间： 2022-03-04 09:23:33

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
7页	78K
描述
2.5-2.7GHz HBT HYBRID IC

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MGFS36E2527_10 数据手册

MITSUBISHI SEMICONDUCTOR

MGFS36E2527

Specifications are subject to change without notice.

2.5-2.7GHz HBT HYBRID IC

Outline Drawing

4.5

1.0

DESCRIPTION

MGFS36E2527 is a GaAs RF amplifier designed

for WiMAX CPE.

36E

2527

(Lot No.)

FEATURES

• InGaP HBT Device

• 6V Operation

• 27dBm Linear Output Power

• 33dB Linear Gain

4.5

• Integrated Output Power Detector

• Integrated 1-bit 19dB Step Attenuator

• 50ohms Matched

• Surface Mount Package

• RoHS Compliant Package

Vc (Vcb)

Vc (Vc1)

Vc (Vc2)

Vc (Vc3)

Pout

APPLICATIONS

Po_det

GND

IEEE802.16-2004, IEEE802.16e-2005

Vref

10 Vcont

DIM IN mm

(X-ray Top View)

FUNCTIONAL BLOCK DIAGRAM

Vc1

Vc2

Vc3

1000pF

Pout

Vcont

(0/3V)

Po_det

Bias Circuit

Vcb

33kohms

1000pF

Vref

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the

possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give

due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits,

(ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.

MITSUBISHI ELECTRIC CORP.

(1/7)

January-2008

12 3 4 5 6 7

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