MITSUBISHI SEMICONDUCTOR
MGFS36E2325
Specifications are subject to change without notice.
2.3-2.5GHz HBT HYBRID IC
Outline Drawing
DESCRIPTION
4.5
1.0
MGFS36E2325 is a GaAs RF amplifier designed
for WiMAX CPE.
36E
2325
(Lot No.)
FEATURES
• InGaP HBT Device
• 6V Operation
• 27dBm Linear Output Power
• 33dB Linear Gain
4.5
• Integrated Output Power Detector
• Integrated 1-bit 16dB Step Attenuator
• 50ohms Matched
• Surface Mount Package
• RoHS Compliant Package
1
2
3
4
5
6
7
8
9
Pin
10
9
8
7
6
Vc (Vcb)
Vc (Vc1)
Vc (Vc2)
Vc (Vc3)
Pout
APPLICATIONS
Po_det
GND
IEEE802.16-2004, IEEE802.16e-2005
Vref
10 Vcont
1
2
3
4
5
DIM IN mm
(X-ray Top View)
FUNCTIONAL BLOCK DIAGRAM
Vc1
Vc2
Vc3
1000pF
1000pF
1000pF
Pin
Pout
Vcont
(0/3V)
Po_det
Bias Circuit
Vcb
33kohms
1000pF
Vref
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give
due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits,
(ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/6)
January-2008