生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-X3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.73 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 100 A | 集电极-发射极最大电压: | 450 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PUFM-X3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MG100G2CH1 | TOSHIBA |
获取价格 |
TRANSISTOR,MOS-BJT POWER MODULE,HALF BRIDGE,500V V(BR)CEO,100A I(C) | |
MG100G2CL1 | TOSHIBA |
获取价格 |
TECHNICAL DATA | |
MG100G2DL1 | TOSHIBA |
获取价格 |
TECHNICAL DATA | |
MG100G2JL1 | TOSHIBA |
获取价格 |
TECHNICAL DATA | |
MG100G2YK1 | ETC |
获取价格 |
TRANSISTOR MODULES | |
MG100G2YL1 | TOSHIBA |
获取价格 |
TRANSISTOR 100 A, 450 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-96A1A, 9 PIN, BIP General | |
MG100G2YS1 | TOSHIBA |
获取价格 |
TRANSISTOR 100 A, 500 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | |
MG100H1BS1 | TOSHIBA |
获取价格 |
TRANSISTOR 100 A, 500 V, N-CHANNEL IGBT, 2-33C1A, 3 PIN, Insulated Gate BIP Transistor | |
MG100H2CK1 | TOSHIBA |
获取价格 |
TRANSISTOR 100 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-80B1A, 5 PIN, BIP General | |
MG100H2CL1 | TOSHIBA |
获取价格 |
TRANSISTOR 100 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-68A1A, 5 PIN, BIP General |