Datasheet > MDF15N60GTH

MDF15N60GTH

更新时间： 2024-11-19 01:18:59

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描述
N-Channel MOSFET 600V, 15A, 0.40(ohm)

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MDF15N60GTH 数据手册

MDP15N60G / MDF15N60G

N-Channel MOSFET 600V, 15A, 0.40Ω

General Description

Features

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.



V_DS= 600V

I_D= 15A

R_DS(ON)≤ 0.40Ω

@ V_GS= 10V

Applications

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.



Power Supply

PFC

High Current, High Speed Switching

TO-220

TO-220F

MDP Series

MDF Series

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

MDP15N60G

MDF15N60G

Unit

600

±30

Gate-Source Voltage

V_GSS

T_C=25^oC

Continuous Drain Current

9.5

15*

9.5*

60*

I_D

T_C=100^oC

Pulsed Drain Current⁽²⁾

I_DM

P_D

T_C=25^oC

Derate above 25 ^oC

231.4

1.85

36.7

0.29

Power Dissipation

W/ ^oC

V/ns

^oC

Repetitive Avalanche Energy⁽²⁾

Peak Diode Recovery dv/dt⁽³⁾

Single Pulse Avalanche Energy⁽⁴⁾

E_AR

dv/dt

E_AS

23.1

4.5

511

Junction and Storage Temperature Range

* Id limited by maximum junction temperature

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

Symbol

R_θJA

MDP15N60G

MDF15N60G

62.5

Unit

62.5

0.54

^oC/W

R_θJC

3.4

Jun. 2011 Version 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7 8

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