Datasheet > MDF1723TH

MDF1723TH

更新时间： 2024-11-19 01:16:39

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1155K
描述
Single N-channel Trench MOSFET 40V, 85A, 2.6m(ohm)

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MDF1723TH 数据手册

MDF1723

Single N-channel Trench MOSFET 40V, 85A, 2.6mΩ

General Description

Features

The MDF1723 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDF1723 is suitable device for Synchronous

Rectification For Server and general purpose applications.



V_DS= 40V

I_D= 85A @V_GS= 10V

R_DS(ON)

< 2.6 mΩ @V_GS= 10V

100% UIL Tested

100% Rg Tested



TO-220F

Absolute Maximum Ratings

Characteristics

Drain-Source Voltage

Symbol

Rating

Unit

V_DSS

V_GSS

Gate-Source Voltage

±20

T_C=25^oC (Silicon Limited)

85.0

Continuous Drain Current ⁽¹⁾

T_C=100^oC

I_D

56.9

Pulsed Drain Current

I_DM

340

T_C=25^oC

34.8

Power Dissipation

P_D

T_C=100^oC

13.9

Single Pulse Avalanche Energy ⁽²⁾

E_AS

162.0

-55~150

^oC

Junction and Storage Temperature Range

T_J, T_stg

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

62.5

Unit

^oC/W

R_θJC

3.6

June. 2016. Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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