Datasheet > MDF1903TH

MDF1903TH

更新时间： 2024-11-19 01:16:39

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1043K
描述
Single N-channel Trench MOSFET 100V, 12A, 110m(ohm)

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MDF1903TH 数据手册

MDF1903

Single N-channel Trench MOSFET 100V, 12A, 110mΩ

ㄹ

General Description

Features

The MDF1903 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDF1903 is suitable device for DC to DC

converter and general purpose applications.



V_DS= 100V

I_D= 12A @V_GS= 10V

R_{DS(ON) (MAX)}

< 110mΩ @V_GS= 10V

< 115mΩ @V_GS= 6.0V

100% UIL Tested

G D S

Absolute Maximum Ratings (Tc = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

100

Unit

V_DSS

V_GSS

Gate-Source Voltage

±20

T_C=25^oC

T_C=70^oC

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current

Power Dissipation

I_D

9.6

I_DM

P_D

T_C=25^oC

T_C=70^oC

33.8

21.7

25.9

-55~150

Single Pulse Avalanche Energy ⁽²⁾

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

62.5

Unit

^oC/W

R_θJC

3.7

Mar. 2016. Version 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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