5秒后页面跳转
MDF1922 PDF预览

MDF1922

更新时间: 2022-02-26 12:49:24
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 935K
描述
Single N-channel Trench MOSFET 100V, 40A, 8.7m(ohm)

MDF1922 数据手册

 浏览型号MDF1922的Datasheet PDF文件第2页浏览型号MDF1922的Datasheet PDF文件第3页浏览型号MDF1922的Datasheet PDF文件第4页浏览型号MDF1922的Datasheet PDF文件第5页浏览型号MDF1922的Datasheet PDF文件第6页 
MDF1922  
Single N-channel Trench MOSFET 100V, 40A, 8.7mΩ  
General Description  
Features  
The MDF1922 uses advanced MagnaChips MOSFET  
Technology, which provides high performance in on-state  
resistance, fast switching performance and excellent  
quality. MDF1922 is suitable device for Synchronous  
Rectification for Server / Adapter and general purpose  
applications.  
VDS = 100V  
ID = 40A @VGS = 10V  
RDS(ON)  
< 8.7 mΩ @VGS = 10V  
100% UIL Tested  
G
G
D
S
TO-220F  
S
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Drain-Source Voltage  
Symbol  
VDSS  
Rating  
Unit  
V
100  
±20  
40  
Gate-Source Voltage  
VGSS  
V
TC=25oC  
Continuous Drain Current (1)  
TC=100oC  
ID  
26  
A
Pulsed Drain Current  
IDM  
160  
28  
TC=25oC  
Power Dissipation  
PD  
W
TC=100oC  
12  
(2)  
Single Pulse Avalanche Energy  
EAS  
400  
-55~150  
mJ  
oC  
Junction and Storage Temperature Range  
TJ, Tstg  
Thermal Characteristics  
Characteristics  
Thermal Resistance, Junction-to-Ambient (1)  
Thermal Resistance, Junction-to-Case  
Symbol  
RθJA  
Rating  
62.5  
Unit  
oC/W  
RθJC  
4.5  
1
Jan. 2015. Rev 1.0  
MagnaChip Semiconductor Ltd.  

与MDF1922相关器件

型号 品牌 描述 获取价格 数据表
MDF1922TH MGCHIP Single N-channel Trench MOSFET 100V, 40A, 8.7m(ohm)

获取价格

MDF1933 MGCHIP Single N-channel Trench MOSFET 80V, 43A, 7.5m(ohm)

获取价格

MDF1933TH MGCHIP Single N-channel Trench MOSFET 80V, 43A, 7.5m(ohm)

获取价格

MDF200A20 SANREX Rectifier Diode, 1 Element, 200A, 200V V(RRM),

获取价格

MDF200A30 SANREX DIODE(NON-ISOLATED TYPE)

获取价格

MDF200A40 SANREX DIODE(NON-ISOLATED TYPE)

获取价格