Datasheet > MDF1922TH

MDF1922TH

更新时间： 2024-11-19 01:16:39

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	935K
描述
Single N-channel Trench MOSFET 100V, 40A, 8.7m(ohm)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MDF1922TH 数据手册

MDF1922

Single N-channel Trench MOSFET 100V, 40A, 8.7mΩ

General Description

Features

The MDF1922 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDF1922 is suitable device for Synchronous

Rectification for Server / Adapter and general purpose

applications.



V_DS= 100V

I_D= 40A @V_GS= 10V

R_DS(ON)

< 8.7 mΩ @V_GS= 10V

100% UIL Tested



TO-220F

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

Unit

100

±20

Gate-Source Voltage

V_GSS

T_C=25^oC

Continuous Drain Current ⁽¹⁾

T_C=100^oC

I_D

Pulsed Drain Current

I_DM

160

T_C=25^oC

Power Dissipation

P_D

T_C=100^oC

(2)

Single Pulse Avalanche Energy

E_AS

400

-55~150

^oC

Junction and Storage Temperature Range

T_J, T_stg

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

62.5

Unit

^oC/W

R_θJC

4.5

Jan. 2015. Rev 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

中文翻译

下载PDF

与MDF1922TH相关器件

型号	品牌	获取价格	描述	数据表
MDF1933	MGCHIP	获取价格	Single N-channel Trench MOSFET 80V, 43A, 7.5m(ohm)
MDF1933TH	MGCHIP	获取价格	Single N-channel Trench MOSFET 80V, 43A, 7.5m(ohm)
MDF200A20	SANREX	获取价格	Rectifier Diode, 1 Element, 200A, 200V V(RRM),
MDF200A30	SANREX	获取价格	DIODE(NON-ISOLATED TYPE)
MDF200A40	SANREX	获取价格	DIODE(NON-ISOLATED TYPE)
MDF200A50	SANREX	获取价格	DIODE(NON-ISOLATED TYPE)
MDF2016BSS120CTD25	TDK	获取价格	噪音滤波器
MDF2016BSS180CTD25	TDK	获取价格	噪音滤波器
MDF2016BSS270CTD25	TDK	获取价格	噪音滤波器
MDF2016BSS420CTD25	TDK	获取价格	噪音滤波器