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MDF18N50BTH PDF预览

MDF18N50BTH

更新时间: 2024-11-19 01:18:59
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
8页 1250K
描述
N-Channel MOSFET 500V, 18.0 A, 0.27(ohm)

MDF18N50BTH 数据手册

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MDP18N50Bꢀ/ꢀMDF18N50B  
NꢁChannelꢀMOSFETꢀ500V,ꢀ18.0ꢀA,ꢀ0.27ꢂ  
GeneralꢀDescriptionꢀ  
Featuresꢀ  
TheꢀMDP/F18N50BꢀusesꢀadvancedꢀMagnachipsꢀ  
ꢀVDSꢀ=ꢀ500Vꢀ  
MOSFETꢀTechnology,ꢀwhichꢀprovidesꢀlowꢀonꢁstateꢀ  
ꢀIDꢀ=ꢀ18.0Aꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ @VGSꢀ=ꢀ10Vꢀ  
ꢀRDS(ON)ꢀ≤ꢀ0.27ꢀ ꢀ ꢀ @VGSꢀ=ꢀ10Vꢀ  
resistance,ꢀhighꢀswitchingꢀperformanceꢀandꢀ  
excellentꢀquality.ꢀ  
MDP/F18N50BꢀisꢀsuitableꢀdeviceꢀforꢀSMPS,ꢀHIDꢀ  
Applicationsꢀ  
andꢀgeneralꢀpurposeꢀapplications.ꢀ  
ꢀPowerꢀSupplyꢀ  
ꢀPFCꢀ  
ꢀBallastꢀ  
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ  
Characteristicsꢀ  
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ  
Symbolꢀ  
MDP18N50Bꢀ MDF18N50Bꢀ  
Unitꢀ  
Vꢀ  
VDSS  
500ꢀ  
±30ꢀ  
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ  
VGSS  
Vꢀ  
ꢀ TC=25oCꢀ  
18ꢀ  
11ꢀ  
18*ꢀ  
11*ꢀ  
72*ꢀ  
37ꢀ  
Aꢀ  
ꢀ ContinuousꢀDrainꢀCurrentꢀ  
IDꢀ  
ꢀ TC=100oCꢀ  
Aꢀ  
ꢀ ꢀ PulsedꢀDrainꢀCurrent(1)  
ꢀ ꢀ PowerꢀDissipationꢀ  
IDM  
72ꢀ  
Aꢀ  
ꢀ TC=25oCꢀ  
236ꢀ  
1.89ꢀ  
Wꢀ  
PDꢀ  
Derateꢀaboveꢀ25ꢀoCꢀ  
0.29ꢀ  
W/ꢀoCꢀ  
mJꢀ  
V/nsꢀ  
mJꢀ  
RepetitiveꢀAvalancheꢀEnergy(1)ꢀ ꢀ  
ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt(3)  
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy(4)  
EAR  
dv/dtꢀ  
EAS  
23.6ꢀ  
4.5ꢀ  
950ꢀ  
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ  
TJ,ꢀTstg  
ꢁ55~150ꢀ  
oCꢀ  
ꢀ Idꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperatureꢀ  
ThermalꢀCharacteristicsꢀ  
Characteristicsꢀ  
Symbolꢀ  
RθJA  
RθJC  
MDP18N50Bꢀ MDF18N50Bꢀ  
Unitꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)  
ThermalꢀResistance,ꢀJunctionꢁtoꢁCase(1)  
62.5ꢀ  
0.53ꢀ  
62.5ꢀ  
3.4ꢀ  
oC/Wꢀ  
1
Decꢀ2011.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.  

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