Datasheet > MDF18N50TH

MDF18N50TH

更新时间： 2022-02-26 12:49:24

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	832K
描述
N-Channel MOSFET 500V, 18 A, 0.27(ohm)

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数据手册

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MDF18N50TH 数据手册

ꢀ

ꢀ MDF18N50ꢀ^ꢀ

ꢀ

ꢀ NꢁChannelꢀMOSFETꢀ500V,ꢀ18ꢀA,ꢀ0.27Ωꢀ

Featuresꢀ

ꢀ

GeneralꢀDescriptionꢀ

ꢀ

ꢀꢀ

V_DSꢀ=ꢀ500Vꢀ

V_DSꢀ=ꢀ550Vꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ @ꢀTjmaxꢀ

Theꢀ MDF18N50ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ MOSFETꢀ

Technology,ꢀ whichꢀ providesꢀ lowꢀ onꢁstateꢀ resistance,ꢀ highꢀ

I_Dꢀ=ꢀ18Aꢀ ꢀ

R_DS(ON)ꢀ≤ꢀ0.27Ωꢀ

@V_GSꢀ=ꢀ10Vꢀ

switchingꢀperformanceꢀandꢀexcellentꢀquality.ꢀ

ꢀ

MDF18N50ꢀisꢀsuitableꢀdeviceꢀforꢀSMPS,ꢀhighꢀspeedꢀswitchingꢀ

Applicationsꢀ

andꢀgeneralꢀpurposeꢀapplications.ꢀ

ꢀ

ꢀꢀ

PowerꢀSupplyꢀ

PFCꢀ

HighꢀCurrent,ꢀHighꢀSpeedꢀSwitchingꢀ

ꢀ ꢀ ꢀ ꢀ

ꢀ

Gꢀ

Dꢀ

Sꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

ꢀ

AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25^oC)ꢀ ꢀ

ꢀ

Characteristicsꢀ

Symbolꢀ

V_DSS

V_DSSꢀ@ꢀT_jmax

V_GSS

Ratingꢀ

500ꢀ

550ꢀ

±30ꢀ

18ꢀ

Unitꢀ

Vꢀ

ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ

ꢀ

ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ@ꢀTjmaxꢀ

ꢀ ꢀ GateꢁSourceꢀVoltageꢀ

ꢀ

Vꢀ

ꢀ

Vꢀ

ꢀ T_C=25^oCꢀ

Aꢀ

ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ(※)ꢀ

I_Dꢀ

I_DM

P_Dꢀ

ꢀ T_C=100^oCꢀ

11ꢀ

Aꢀ

ꢀ ꢀ PulsedꢀDrainꢀCurrent⁽¹⁾

ꢀ ꢀ PowerꢀDissipationꢀ

ꢀ

72ꢀ

Aꢀ

ꢀ T_C=25^oCꢀ

37ꢀ

Wꢀ

W/ ^oCꢀ

Derateꢀaboveꢀ25 ^oCꢀ

0.29ꢀ

4.5ꢀ

ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt⁽³⁾

ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy⁽⁴⁾

ꢀ

Dv/dtꢀ

E_AS

T_J,ꢀT_stg

V/nsꢀ

mJꢀ

^oC

ꢀ

950ꢀ

ꢁ55~150ꢀ

JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ

ꢀ

ꢀ ꢀ ※ꢀ Idꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperatureꢀ

ꢀ

ThermalꢀCharacteristicsꢀ

ꢀ

Characteristicsꢀ

ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient⁽¹⁾

ThermalꢀResistance,ꢀJunctionꢁtoꢁCase⁽¹⁾

Symbolꢀ

R_θJA

R_θJC

Ratingꢀ

62.5ꢀ

3.4ꢀ

Unitꢀ

ꢀ

^oC/Wꢀ

ꢀ

ꢀ ꢀ ꢀ ꢀ

Decꢀ2009.ꢀVersionꢀ1.4ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

1ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

12 3 4 5 6

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