Datasheet > MCP87022_12

MCP87022_12

更新时间： 2024-09-14 12:27:23

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描述
High-Speed N-Channel Power MOSFET

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MCP87022_12 数据手册

MCP87022

High-Speed N-Channel Power MOSFET

Features:

Description

• Low Drain-to-Source On Resistance (R_DS(ON)

)

The MCP87022 is an N-Channel power MOSFET in a

popular PDFN 5 mm x 6 mm package. Advanced

packaging and silicon processing technologies allow

the MCP87022 to achieve a low Q_Gfor a given R_DS(on)

value, resulting in a low Figure of Merit (FOM).

Combined with low R_G, the low Figure of Merit of the

MCP87022 allows high efficiency power conversion

with reduced switching and conduction losses.

• Low Total Gate Charge (Q_G) and Gate-to-Drain

Charge (Q_GD

)

• Low Series Gate Resistance (R_G)

• Fast Switching

• Capable of Short Dead-Time Operation

• ROHS Compliant

Applications

• Point-of-Load DC-DC Converters

• High Efficiency Power Management in Servers,

Networking and Automotive Applications

Package Type

PDFN 5 x 6

S 1

Product Summary Table: Unless otherwise indicated, T = +25˚C

Parameters

Operating Characteristics

Sym

Min Typ Max Units

Conditions

Drain-to-Source Breakdown Voltage

—

= 0V, I = 250 µA

DSS

Gate-to-Source Threshold Voltage

Drain-to-Source On Resistance

1.3

1.6

= V , I = 250 µA

GS D

GS(TH)

DS(ON)

—

2.2

1.9

2.6

2.3

mΩ

= 4.5V, I = 25A

= 10V, I = 25A

Total Gate Charge

25.5

= 12.5V, I = 25A, V = 4.5V

D GS

Gate-to-Drain Charge

Series Gate Resistance

—

= 12.5V, I = 25A

DS D

1.3

Ω

—

Thermal Characteristics

Thermal Resistance Junction-to-X

—

˚C/W Note 1

˚C/W Note 2

θJX

Thermal Resistance Junction-to-Case

1.6

θJC

Note 1: R_θJXis determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of

2 oz. copper. This characteristic is dependent on user’s board design.

2: R_θJCis determined using JEDEC 51-14 Method. This characteristic is determined by design.

 2012 Microchip Technology Inc.

DS25133B-page 1

12 3 4 5 6 7...16

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