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MCP87050_12 PDF预览

MCP87050_12

更新时间: 2024-09-14 12:27:23
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美国微芯 - MICROCHIP /
页数 文件大小 规格书
16页 758K
描述
High-Speed N-Channel Power MOSFET

MCP87050_12 数据手册

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MCP87050  
High-Speed N-Channel Power MOSFET  
Features:  
Description  
• Low Drain-to-Source On Resistance (RDS(ON)  
)
The MCP87050 is an N-Channel power MOSFET in a  
popular PDFN 5 mm x 6 mm package. Advanced  
packaging and silicon processing technologies allow  
the MCP87050 to achieve a low QG for a given RDS(ON)  
value, resulting in a low Figure of Merit (FOM).  
Combined with low RG, the low Figure of Merit of the  
MCP87050 allows high efficiency power conversion  
with reduced switching and conduction losses.  
• Low Total Gate Charge (QG) and Gate-to-Drain  
Charge (QGD  
)
• Low Series Gate Resistance (RG)  
• Fast Switching  
• Capable of Short Dead-Time Operation  
• RoHS Compliant  
Applications  
• Point-of-Load DC-DC Converters  
• High Efficiency Power Management in Servers,  
Networking, and Automotive Applications  
Package Type  
PDFN 5 x 6  
8
7
6
5
S 1  
D
D
D
D
2
3
4
S
S
G
Product Summary Table: Unless otherwise indicated, TA = +25˚C  
Parameters  
Sym  
Min Typ Max Units  
Conditions  
Operating Characteristics  
Drain-to-Source Breakdown Voltage  
BVDSS  
VGS(TH)  
RDS(ON)  
25  
1
V
V
VGS = 0V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
Gate-to-Source Threshold Voltage  
Drain-to-Source On Resistance  
1.3  
1.6  
5.0  
4.2  
6.0  
5.0  
mVGS = 4.5V, ID = 20A  
mGS = 10V, ID = 20A  
V
Total Gate Charge  
QG  
QGD  
RG  
12.5 15  
nC VDS = 12.5V, ID = 20A, VGS = 4.5V  
Gate-to-Drain Charge  
Series Gate Resistance  
4.7  
1.1  
nC VDS = 12.5V, ID = 20A  
Thermal Characteristics  
Thermal Resistance Junction-to-X  
RθJX  
RθJC  
56  
˚C/W Note 1  
Thermal Resistance Junction-to-Case  
1.9 ˚C/W Note 2  
Note 1:  
R
θJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of  
2 oz. copper. This characteristic is dependent on user’s board design.  
2: RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.  
2012 Microchip Technology Inc.  
DS22308B-page 1  

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