MCP87050
High-Speed N-Channel Power MOSFET
Features:
Description
• Low Drain-to-Source On Resistance (RDS(ON)
)
The MCP87050 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87050 to achieve a low QG for a given RDS(ON)
value, resulting in a low Figure of Merit (FOM).
Combined with low RG, the low Figure of Merit of the
MCP87050 allows high efficiency power conversion
with reduced switching and conduction losses.
• Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD
)
• Low Series Gate Resistance (RG)
• Fast Switching
• Capable of Short Dead-Time Operation
• RoHS Compliant
Applications
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking, and Automotive Applications
Package Type
PDFN 5 x 6
8
7
6
5
S 1
D
D
D
D
2
3
4
S
S
G
Product Summary Table: Unless otherwise indicated, TA = +25˚C
Parameters
Sym
Min Typ Max Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
BVDSS
VGS(TH)
RDS(ON)
25
1
—
—
V
V
VGS = 0V, ID = 250 µA
VDS = VGS, ID = 250 µA
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
1.3
1.6
—
—
—
5.0
4.2
6.0
5.0
mΩ VGS = 4.5V, ID = 20A
mΩ GS = 10V, ID = 20A
V
Total Gate Charge
QG
QGD
RG
12.5 15
nC VDS = 12.5V, ID = 20A, VGS = 4.5V
Gate-to-Drain Charge
Series Gate Resistance
—
—
4.7
1.1
—
—
nC VDS = 12.5V, ID = 20A
Ω
Thermal Characteristics
Thermal Resistance Junction-to-X
RθJX
RθJC
—
—
—
—
56
˚C/W Note 1
Thermal Resistance Junction-to-Case
1.9 ˚C/W Note 2
Note 1:
R
θJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
2: RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
2012 Microchip Technology Inc.
DS22308B-page 1