Datasheet > MCP87055TULC

MCP87055TULC

更新时间： 2024-09-15 02:51:59

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美国微芯 - MICROCHIP		/
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描述
High-Speed N-Channel Power MOSFET

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MCP87055TULC 数据手册

MCP87055

High-Speed N-Channel Power MOSFET

Features

Description

• Low Drain-to-Source On Resistance (R_DS(ON)

)

The MCP87055 device is an N-Channel power

MOSFET in

a popular PDFN 3.3 mm x 3.3 mm

• Low Total Gate Charge (Q_G) and Gate-to-Drain

Charge (Q_GD

package. Advanced packaging and silicon processing

technologies allow the MCP87055 to achieve a low Q_G

for a given R_DS(on)value, resulting in a low Figure of

Merit (FOM). Combined with low R_G, the low Figure of

Merit of the MCP87055 allows high-efficiency power

conversion with reduced switching and conduction

losses.

)

• Low Series Gate Resistance (R_G)

• Fast Switching

• Capable of Short Dead-Time Operation

• ROHS Compliant

Applications

• Point-of-Load DC-DC Converters

• High Efficiency Power Management in Servers,

Networking, and Automotive Applications

Package Type

PDFN 3.3 x 3.3

S 1

Product Summary Table: Unless otherwise indicated, T = +25˚C

Parameters

Operating Characteristics

Sym

Min Typ Max Units

Conditions

Drain-to-Source Breakdown Voltage

—

= 0V, I = 250 µA

DSS

Gate-to-Source Threshold Voltage

Drain-to-Source On Resistance

1.1

1.35

1.7

= V , I = 250 µA

GS D

GS(TH)

DS(ON)

—

5.7

4.7

mΩ

= 4.5V, I = 20A

= 10V, I = 20A

Total Gate Charge

= 12.5V, I = 20A, V = 4.5V

D GS

Gate-to-Drain Charge

Series Gate Resistance

—

4.5

2.1

—

= 12.5V, I = 20A

DS D

Ω

Thermal Characteristics

Thermal Resistance Junction-to-X

—

˚C/W Note 1

˚C/W Note 2

θJX

3.4

Thermal Resistance Junction-to-Case

θJC

Note 1: R_θJXis determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of

2 oz. copper. This characteristic is dependent on user’s board design.

2: R_θJCis determined using JEDEC 51-14 Method. This characteristic is determined by design.

 2012 Microchip Technology Inc.

DS22323B-page 1

12 3 4 5 6 7...16

中文翻译

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