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MCP87055TULC PDF预览

MCP87055TULC

更新时间: 2024-11-26 02:51:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
16页 663K
描述
High-Speed N-Channel Power MOSFET

MCP87055TULC 数据手册

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MCP87055  
High-Speed N-Channel Power MOSFET  
Features  
Description  
• Low Drain-to-Source On Resistance (RDS(ON)  
)
The MCP87055 device is an N-Channel power  
MOSFET in  
a popular PDFN 3.3 mm x 3.3 mm  
• Low Total Gate Charge (QG) and Gate-to-Drain  
Charge (QGD  
package. Advanced packaging and silicon processing  
technologies allow the MCP87055 to achieve a low QG  
for a given RDS(on) value, resulting in a low Figure of  
Merit (FOM). Combined with low RG, the low Figure of  
Merit of the MCP87055 allows high-efficiency power  
conversion with reduced switching and conduction  
losses.  
)
• Low Series Gate Resistance (RG)  
• Fast Switching  
• Capable of Short Dead-Time Operation  
• ROHS Compliant  
Applications  
• Point-of-Load DC-DC Converters  
• High Efficiency Power Management in Servers,  
Networking, and Automotive Applications  
Package Type  
PDFN 3.3 x 3.3  
8
7
6
5
S 1  
D
D
D
D
2
3
4
S
S
G
Product Summary Table: Unless otherwise indicated, T = +25˚C  
A
Parameters  
Operating Characteristics  
Sym  
Min Typ Max Units  
Conditions  
Drain-to-Source Breakdown Voltage  
BV  
25  
V
V
V
V
= 0V, I = 250 µA  
D
DSS  
GS  
Gate-to-Source Threshold Voltage  
Drain-to-Source On Resistance  
V
R
1.1  
1.35  
1.7  
= V , I = 250 µA  
GS D  
GS(TH)  
DS(ON)  
DS  
5.7  
4.7  
11  
7
6
m  
mΩ  
nC  
V
V
V
= 4.5V, I = 20A  
D
GS  
GS  
DS  
= 10V, I = 20A  
D
Total Gate Charge  
Q
14  
= 12.5V, I = 20A, V = 4.5V  
D GS  
G
Gate-to-Drain Charge  
Series Gate Resistance  
Q
4.5  
2.1  
nC  
V
= 12.5V, I = 20A  
GD  
DS D  
R
G
Thermal Characteristics  
Thermal Resistance Junction-to-X  
R
R
66  
˚C/W Note 1  
˚C/W Note 2  
θJX  
3.4  
Thermal Resistance Junction-to-Case  
θJC  
Note 1: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of  
2 oz. copper. This characteristic is dependent on user’s board design.  
2: RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.  
2012 Microchip Technology Inc.  
DS22323B-page 1  

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