Datasheet > MCP87130

MCP87130

更新时间： 2024-11-25 12:27:15

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
18页	1042K
描述
High-Speed N-Channel Power MOSFET

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中文翻译

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MCP87130 数据手册

MCP87130

High-Speed N-Channel Power MOSFET

Features:

Description:

• Low Drain-to-Source On Resistance (R_DS(ON)

)

The MCP87130 is an N-Channel power MOSFET in a

popular PDFN 5 mm x 6 mm package as well as a

• Low Total Gate Charge (Q_G) and Gate-to-Drain

Charge (Q_GD

)

PDFN

3.3 mm x 3.3 mm

package.

Advanced

• Low Series Gate Resistance (R_G)

• Capable of Short Dead-Time Operation

• RoHS Compliant

packaging and silicon processing technologies allow

the MCP87130 to achieve a low Q_Gfor a given R_DS(ON)

value, resulting in a low Figure of Merit (FOM).

Combined with low R_G, the low FOM of the MCP87130

allows high efficiency power conversion with reduced

switching and conduction losses.

Applications:

• Point-of-Load DC-DC Converters

• High Efficiency Power Management in Servers,

Networking, and Automotive Applications

Package Type

PDFN 5 x 6

PDFN 3.3 x 3.3

S 1

Product Summary Table: Unless otherwise indicated, T = +25˚C.

Parameters

Operating Characteristics

Sym

Min Typ Max Units

Conditions

Drain-to-Source Breakdown Voltage

Gate-to-Source Threshold Voltage

Drain-to-Source On Resistance

—

= 0V, I = 250 µA

DSS

1.1

1.35

1.7

= V , I = 250 µA

GS D

GS(TH)

DS(ON)

—

13.8 16.5

11.3 13.5

mΩ

= 4.5V, I = 10A

= 10V, I = 10A

Total Gate Charge

5.5

= 12.5V, I = 10A,

= 4.5V

Gate-to-Drain Charge

Series Gate Resistance

Thermal Characteristics

—

2.6

1.7

—

= 12.5V, I = 10A

DS D

Ω

Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN

Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN

Thermal Resistance Junction-to-X, 8L 5x6-PDFN

Thermal Resistance Junction-to-Case, 8L 5x6-PDFN

—

3.5

°C/W Note 1

°C/W Note 2

°C/W Note 1

°C/W Note 2

θJX

θJC

θJX

θJC

2.1

Note 1:

is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 2 oz. cop-

θJX

per. This characteristic is dependent on user’s board design.

is determined using JEDEC 51-14 Method. This characteristic is determined by design.

θJC

 2013 Microchip Technology Inc.

DS25159A-page 1

12 3 4 5 6 7...18

中文翻译

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