Datasheet > MCP87030_13

MCP87030_13

更新时间： 2024-11-28 01:18:43

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描述
High-Speed N-Channel Power MOSFET

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MCP87030_13 数据手册

MCP87030

High-Speed N-Channel Power MOSFET

Features:

Description:

• Low Drain-to-Source On Resistance (R_DS(ON)

)

The MCP87030 is an N-Channel power MOSFET in a

popular PDFN 5 mm x 6 mm package. Advanced

packaging and silicon processing technologies allow

the MCP87030 to achieve a low Q_Gfor a given R_DS(on)

value, resulting in a low Figure of Merit (FOM).

Combined with low R_G, the low FOM of the MCP87030

allows high efficiency power conversion with reduced

switching and conduction losses.

• Low Total Gate Charge (Q_G) and Gate-to-Drain

Charge (Q_GD

)

• Low Series Gate Resistance (R_G)

• Fast Switching

• Capable of Short Dead-Time Operation

• RoHS Compliant

Applications:

• Point-of-Load DC-DC Converters

• High-Efficiency Power Management in Servers,

Networking and Automotive Applications

Package Type

PDFN 5 x 6

G 4

Product Summary Table: Unless otherwise indicated, T_A= +25°C

Parameters

Sym.

Min. Typ. Max. Units

Conditions

Operating Characteristics

Drain-to-Source Breakdown Voltage

BV_DSS

V_GS(TH)

R_DS(ON)

—

V_GS= 0V, I_D= 250 µA

V_DS= V_GS, I_D= 250 µA

Gate-to-Source Threshold Voltage

Drain-to-Source On Resistance

1.3

1.6

—

3.3

2.8

mΩ V_GS= 4.5V, I_D= 20A

3.5

mΩ

V_GS= 10V, I_D= 20A

Total Gate Charge

Q_G

Q_GD

R_G

V_DS= 12.5V, I_D= 20A, V_GS= 4.5V

Gate-to-Drain Charge

Series Gate Resistance

—

6.7

1.2

—

V_DS= 12.5V, I_D= 20A

—

Ω

Thermal Characteristics

Thermal Resistance Junction-to-X

R_θJX

R_θJC

—

°C/W Note 1

°C/W Note 2

Thermal Resistance Junction-to-Case

1.2

Note 1:

_θJXis determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of

2 oz. copper. This characteristic is dependent on user’s board design.

_θJCis determined using JEDEC 51-14 Method. This characteristic is determined by design.

 2013 Microchip Technology Inc.

DS200002328B-page 3

12 3 4 5 6 7...16

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