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MC100EPT21DT PDF预览

MC100EPT21DT

更新时间: 2024-11-20 04:34:19
品牌 Logo 应用领域
安森美 - ONSEMI 锁存器接口集成电路光电二极管
页数 文件大小 规格书
8页 84K
描述
3.3V Differential LVPECL/LVDS/CML to LVTTL/LVCMOS Translator

MC100EPT21DT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:TSSOP, TSSOP8,.19
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.14最大延迟:2.25 ns
接口集成电路类型:PECL TO TTL TRANSLATORJESD-30 代码:S-PDSO-G8
JESD-609代码:e0长度:3 mm
湿度敏感等级:1位数:1
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
输出锁存器或寄存器:NONE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.19封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):240
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.1 mm子类别:Level Translators
最大供电电压:3.6 V最小供电电压:3 V
标称供电电压:3.3 V表面贴装:YES
技术:ECL温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn90Pb10)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3 mm
Base Number Matches:1

MC100EPT21DT 数据手册

 浏览型号MC100EPT21DT的Datasheet PDF文件第2页浏览型号MC100EPT21DT的Datasheet PDF文件第3页浏览型号MC100EPT21DT的Datasheet PDF文件第4页浏览型号MC100EPT21DT的Datasheet PDF文件第5页浏览型号MC100EPT21DT的Datasheet PDF文件第6页浏览型号MC100EPT21DT的Datasheet PDF文件第7页 
MC100EPT21  
3.3VꢀDifferential  
LVPECL/LVDS/CML to  
LVTTL/LVCMOS Translator  
The MC100EPT21 is a Differential LVPECL/LVDS/CML to  
LVTTL/LVCMOS translator. Because LVPECL (Positive ECL),  
LVDS, and positive CML input levels and LVTTL/LVCMOS output  
levels are used, only +3.3 V and ground are required. The small  
outline 8−lead SOIC package makes the EPT21 ideal for applications  
which require the translation of a clock or data signal.  
http://onsemi.com  
MARKING  
DIAGRAMS*  
The V  
output allows this EPT21 to be cap coupled in either  
8
BB  
SO−8  
D SUFFIX  
CASE 751  
single−ended or differential input mode. When single−ended cap  
coupled, V output is tied to the D input and D is driven for a  
KPT21  
ALYW  
8
BB  
1
G
non−inverting buffer, or V output is tied to the D input and D is  
BB  
1
driven for an inverting buffer. When cap coupled differentially, V  
BB  
output is connected through a resistor to each input pin. If used, the  
pin should be bypassed to V via a 0.01 mF capacitor. For  
additional information see AND8020/D. For a single−ended direct  
connection use an external voltage reference source such as a resistor  
V
BB  
8
CC  
TSSOP−8  
DT SUFFIX  
CASE 948R  
KA21  
8
ALYWG  
1
G
divider. Do not use V for a single−ended direct connection or port to  
BB  
1
another device.  
Features  
DFN8  
MN SUFFIX  
CASE 506AA  
1.4 ns Typical Propagation Delay  
Maximum Frequency > 275 MHz Typical  
LVPECL/LVDS/CML Inputs, LVTTL/LVCMOS Outputs  
24 mA TTL outputs  
1
4
A
L
Y
= Assembly Location  
= Wafer Lot  
= Year  
Operating Range: V = 3.0 V to 3.6 V with GND = 0 V  
CC  
The 100 Series Contains Temperature Compensation  
W = Work Week  
M = Date Code  
V Output  
BB  
G
= Pb−Free Package  
Pb−Free Packages are Available  
(Note: Microdot may be in either location)  
*For additional marking information, refer to  
Application Note AND8002/D.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
December, 2006 − Rev. 15  
MC100EPT21/D  

MC100EPT21DT 替代型号

型号 品牌 替代类型 描述 数据表
83021AMILF IDT

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