Datasheet > MC-4R256FKE6D

MC-4R256FKE6D

更新时间： 2024-11-28 22:16:39

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器
页数	文件大小	规格书
14页	116K
描述
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MC-4R256FKE6D 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4R256FKE6D

Direct Rambus DRAM RIMM^TMModule

256M-BYTE (128M-WORD x 16-BIT)

Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for

use in a broad range of applications including computer memory, personal computers, workstations, and other

applications where high bandwidth and low latency are required.

MC-4R256FKE6D modules consists of eight 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588).

These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling

Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and

board design technologies.

Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,

randomly addressed memory transactions. The separate control and data buses with independent row and column

control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions

per device.

Features

• 184 edge connector pads with 1mm pad spacing

• 256 MB Direct RDRAM storage

• Each RDRAM has 32 banks, for 256 banks total on module

• Gold plated contacts

• RDRAMs use Chip Scale Package (CSP)

• Serial Presence Detect support

• Operates from a 2.5 V supply

• Powerdown self refresh modes

• Separate Row and Column buses for higher efficiency

• Over Drive Factor (ODF) support

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

Document No. E0094N20 (Ver. 2.0)

Date Published June 2002 (K) Japan

URL: http://www.elpida.com

Elpida Memory,Inc. 2001-2002

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

12 3 4 5 6 7...14

中文翻译

下载PDF

与MC-4R256FKE6D相关器件

型号	品牌	获取价格	描述	数据表
MC-4R256FKE6D-653	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
MC-4R256FKE6D-745	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
MC-4R256FKE6D-840	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
MC-4R256FKE6D-845	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
MC-4R256FKE8D	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
MC-4R256FKE8D-653	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
MC-4R256FKE8D-745	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
MC-4R256FKE8D-840	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
MC-4R256FKE8D-845	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
MC-4R256FKE8S	ELPIDA	获取价格	Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)

与MC-4R256FKE6D相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

MC-4R256FKE6D

MC-4R256FKE6D 数据手册

与MC-4R256FKE6D相关器件

与MC-4R256FKE6D相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MC-4R256FKE6D

MC-4R256FKE6D 数据手册

与MC-4R256FKE6D相关器件

与MC-4R256FKE6D相关文章

您还可以找

您在本页遇到什么问题？