Datasheet > MC-4R256FKE8S

MC-4R256FKE8S

更新时间： 2024-11-28 22:46:23

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器
页数	文件大小	规格书
14页	126K
描述
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)

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MC-4R256FKE8S 数据手册

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MOS INTEGRATED CIRCUIT

MC-4R256FKE8S

Direct Rambus DRAM SO-RIMM^TMModule

256M-BYTE (128M-WORD x 18-BIT)

Description

The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable

for use in a broad range of applications including computer memory, mobile personal computers, networking

systems, and other applications where high bandwidth and low latency are required.

MC-4R256FKE8S modules consists of eight 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588).

These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling

Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design

technologies.

Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per 16 bytes).

The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,

randomly addressed memory transactions. The separate control and data buses with independent row and column

control yield high bus efficiency. The Direct RDRAM's multi-bank architecture supports up to four simultaneous

transactions per device.

Features

• 160 edge connector pads with 0.65mm pad spacing

• 256 MB Direct RDRAM storage

• Each RDRAM has 32 banks, for 256 banks total on module

• Gold plated contacts

• RDRAMs use Chip Scale Package (CSP)

• Serial Presence Detect support

• Operates from a 2.5 V supply

• Powerdown self refresh modes

• Separate Row and Column buses for higher efficiency

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

Document No. E0138N30 (Ver. 3.0)

Date Published June 2002 (K) Japan

URL: http://www.elpida.com

Elpida Memory,Inc. 2001-2002

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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与MC-4R256FKE8S相关器件

型号	品牌	获取价格	描述	数据表
MC-4R256FKE8S-653	ELPIDA	获取价格	Rambus DRAM Module, 128MX18, MOS, SOCKET TYPE, SORIMM-160
MC-4R256FKE8S-840	ELPIDA	获取价格	Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
MC-4R256FKE8S-845	ELPIDA	获取价格	Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
MC-4R256FKK6K	ELPIDA	获取价格	256MB 32-bit Direct Rambus DRAM RIMM Module
MC-4R256FKK6K-840	ELPIDA	获取价格	256MB 32-bit Direct Rambus DRAM RIMM Module
MC-4R256FKK8K	ELPIDA	获取价格	256MB 32-bit Direct Rambus DRAM RIMM Module
MC-4R256FKK8K-840	ELPIDA	获取价格	256MB 32-bit Direct Rambus DRAM RIMM Module
MC-4R512FKE6D	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT)
MC-4R512FKE6D-653	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT)
MC-4R512FKE6D-745	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT)

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