5秒后页面跳转
MC-4R512FKE8D PDF预览

MC-4R512FKE8D

更新时间: 2024-11-28 22:16:39
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器
页数 文件大小 规格书
14页 132K
描述
Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)

MC-4R512FKE8D 数据手册

 浏览型号MC-4R512FKE8D的Datasheet PDF文件第2页浏览型号MC-4R512FKE8D的Datasheet PDF文件第3页浏览型号MC-4R512FKE8D的Datasheet PDF文件第4页浏览型号MC-4R512FKE8D的Datasheet PDF文件第5页浏览型号MC-4R512FKE8D的Datasheet PDF文件第6页浏览型号MC-4R512FKE8D的Datasheet PDF文件第7页 
DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-4R512FKE8D  
Direct Rambus DRAM RIMMTM Module  
512M-BYTE (256M-WORD x 18-BIT)  
Description  
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for  
use in a broad range of applications including computer memory, personal computers, workstations, and other  
applications where high bandwidth and low latency are required.  
MC-4R512FKE8D modules consists of sixteen 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588).  
These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling  
Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and  
board design technologies.  
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).  
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,  
randomly addressed memory transactions. The separate control and data buses with independent row and column  
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions  
per device.  
Features  
184 edge connector pads with 1mm pad spacing  
512 MB Direct RDRAM storage  
Each RDRAM has 32 banks, for 512 banks total on module  
Gold plated contacts  
RDRAMs use Chip Scale Package (CSP)  
Serial Presence Detect support  
Operates from a 2.5 V supply  
Powerdown self refresh modes  
Separate Row and Column buses for higher efficiency  
Over Drive Factor (ODF) support  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for  
availability and additional information.  
Document No. E0076N20 (Ver 2.0)  
Date Published June 2002 (K) Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2001-2002  
NEC Corporation. 2000  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

与MC-4R512FKE8D相关器件

型号 品牌 获取价格 描述 数据表
MC-4R512FKE8D-653 ELPIDA

获取价格

Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKE8D-653 NEC

获取价格

Rambus DRAM Module, 256MX18, 53ns, CMOS, RIMM-184
MC-4R512FKE8D-745 NEC

获取价格

Rambus DRAM Module, 256MX18, 45ns, CMOS, RIMM-184
MC-4R512FKE8D-745 ELPIDA

获取价格

Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKE8D-840 ELPIDA

获取价格

Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKE8D-845 NEC

获取价格

Rambus DRAM Module, 256MX18, 45ns, CMOS, RIMM-184
MC-4R512FKE8D-845 ELPIDA

获取价格

Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKK6K ELPIDA

获取价格

512MB 32-bit Direct Rambus DRAM RIMM Module
MC-4R512FKK6K-840 ELPIDA

获取价格

512MB 32-bit Direct Rambus DRAM RIMM Module
MC-4R512FKK8K ELPIDA

获取价格

512MB 32-bit Direct Rambus DRAM RIMM Module