Datasheet > MC-4R512FKK8K

MC-4R512FKK8K

更新时间： 2024-11-28 22:16:39

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器
页数	文件大小	规格书
13页	92K
描述
512MB 32-bit Direct Rambus DRAM RIMM Module

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MC-4R512FKK8K 数据手册

PRELIMINARY DATA SHEET

512MB 32-bit Direct Rambus DRAM RIMM Module

MC-4R512FKK8K (128M words × 18 bits × 2 channels)

Description

Features

The 32-bit Direct Rambus RIMM module is a general-

purpose high-performance lines of memory modules

suitable for use in a broad range of applications

including computer memory, personal computers,

workstations, and other applications where high

bandwidth and latency are required.

• 512MB Direct RDRAM storage and 512 banks total

on module

• 2 independent Direct RDRAM channels, 1 pass

through and 1 terminated on 32-bit RIMM module

• High speed 800MHz Direct RDRAM devices

• 232 edge connector pads with 1mm pad spacing

Module PCB size: 133.35mm × 39.925mm ×

1.27mm

The 32-bit RIMM module consists of 288Mb Direct

Rambus DRAM (Direct RDRAM) devices. These are

extremely high-speed CMOS DRAMs organized as

16M words by 18 bits. The use of Rambus Signaling

Level (RSL) technology permits the use of conventional

system and board design technologies. The 32-bit

RIMM modules support 800MHz transfer rate per pin,

resulting in total module bandwidth of 3.2GB/s.

Gold plated edge connector pads contacts

• Serial Presence Detect (SPD) support

• Operates from a 2.5V (±5%) supply

• Low power and power down self refresh modes

• Separate Row and Column buses for higher

efficiency

The 32-bit RIMM module provides two independent 18

bit memory channels to facilitate compact system

design. The "Thru" Channel enters and exits the

module to support a connection to or from a controller,

memory slot, or termination. The "Term" Channel is

terminated on the module and supports a connection

from a controller or another memory slot.

The RDRAM

sustained bandwidth for multiple, simultaneous,

randomly addressed memory transactions. The

architecture enables the highest

separate control and data buses with independent row

and column control yield over 95% bus efficiency. The

RDRAM device multi-bank architecture supports up to

four simultaneous transactions per device.

Document No. E0254N10 (Ver. 1.0)

Date Published April 2002 (K) Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2002

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

12 3 4 5 6 7...13

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与MC-4R512FKK8K相关器件

型号	品牌	获取价格	描述	数据表
MC-4R512FKK8K-840	ELPIDA	获取价格	512MB 32-bit Direct Rambus DRAM RIMM Module
MC-4R64CEE6B	NEC	获取价格	Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT
MC-4R64CEE6B-653	NEC	获取价格	Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT
MC-4R64CEE6B-745	NEC	获取价格	Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT
MC-4R64CEE6B-845	NEC	获取价格	Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT
MC-4R64CEE6C	NEC	获取价格	Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT
MC-4R64CEE6C-653	NEC	获取价格	Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT
MC-4R64CEE6C-745	NEC	获取价格	Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT
MC-4R64CEE6C-845	NEC	获取价格	Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT
MC-4R64CPE6C	NEC	获取价格	Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT

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