MC-4R512FKE6D-840

更新时间： 2024-11-28 22:16:39

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器
页数	文件大小	规格书
14页	131K
描述
Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT)

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DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4R512FKE6D-840

Direct Rambus DRAM RIMM^TMModule

512M-BYTE (256M-WORD x 16-BIT)

Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for

use in a broad range of applications including computer memory, personal computers, workstations, and other

applications where high bandwidth and low latency are required.

MC-4R512FKE6D modules consists of sixteen 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588).

These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling

Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and

board design technologies.

Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,

randomly addressed memory transactions. The separate control and data buses with independent row and column

control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions

per device.

Features

• 184 edge connector pads with 1mm pad spacing

• 512 MB Direct RDRAM storage

• Each RDRAM has 32 banks, for 512 banks total on module

• Gold plated contacts

• RDRAMs use Chip Scale Package (CSP)

• Serial Presence Detect support

• Operates from a 2.5 V supply

• Powerdown self refresh modes

• Separate Row and Column buses for higher efficiency

• Over Drive Factor (ODF) support

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

Document No. E0263N10 (Vert 1.0)

Date Published April 2002 (K) Japan

URL: http://www.elpida.com

Elpida Memory,Inc. 2002

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

12 3 4 5 6 7...14

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与MC-4R512FKE6D-840相关器件

型号	品牌	获取价格	描述	数据表
MC-4R512FKE6D-845	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT)
MC-4R512FKE8D	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKE8D-653	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKE8D-653	NEC	获取价格	Rambus DRAM Module, 256MX18, 53ns, CMOS, RIMM-184
MC-4R512FKE8D-745	NEC	获取价格	Rambus DRAM Module, 256MX18, 45ns, CMOS, RIMM-184
MC-4R512FKE8D-745	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKE8D-840	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKE8D-845	NEC	获取价格	Rambus DRAM Module, 256MX18, 45ns, CMOS, RIMM-184
MC-4R512FKE8D-845	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKK6K	ELPIDA	获取价格	512MB 32-bit Direct Rambus DRAM RIMM Module

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