Datasheet > MC-4R256CPE6C-745

MC-4R256CPE6C-745

更新时间： 2024-11-28 22:16:39

品牌	Logo	应用领域
日电电子 - NEC		动态存储器
页数	文件大小	规格书
16页	133K
描述
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT

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PRELIMINARY DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4R256CPE6C

Direct Rambus^TMDRAM RIMM^TMModule

256M-BYTE (128M-WORD x 16-BIT)

Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for

use in a broad range of applications including computer memory, personal computers, workstations, and other

applications where high bandwidth and low latency are required.

MC-4R256CPE6C modules consists of sixteen 128M Direct Rambus DRAM (Direct RDRAM™) devices

(µPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of

Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using

conventional system and board design technologies.

Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,

randomly addressed memory transactions. The separate control and data buses with independent row and column

control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions

per device.

Features

• 184 edge connector pads with 1mm pad spacing

• 256 MB Direct RDRAM storage

• Each RDRAM has 32 banks, for 512 banks total on module

• Gold plated contacts

• RDRAMs use Chip Scale Package (CSP)

• Serial Presence Detect support

• Operates from a 2.5 V supply

• Low power and powerdown self refresh modes

• Separate Row and Column buses for higher efficiency

• Over Drive Factor (ODF) support

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M14809EJ2V0DS00 (2nd edition)

Date Published August 2000 NS CP (K)

Printed in Japan

The mark shows major revised points.

★

2000

12 3 4 5 6 7...16

中文翻译

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与MC-4R256CPE6C-745相关器件

型号	品牌	获取价格	描述	数据表
MC-4R256CPE6C-845	ELPIDA	获取价格	Direct Rambus? DRAM RIMM? Module 256M-BYTE (128M-WORD x 16-BIT)
MC-4R256CPE6C-845	NEC	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
MC-4R256FKE6D	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
MC-4R256FKE6D-653	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
MC-4R256FKE6D-745	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
MC-4R256FKE6D-840	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
MC-4R256FKE6D-845	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
MC-4R256FKE8D	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
MC-4R256FKE8D-653	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
MC-4R256FKE8D-745	ELPIDA	获取价格	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)

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