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MC-458CA721ESA-A10 PDF预览

MC-458CA721ESA-A10

更新时间： 2024-02-29 01:50:15
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路动态存储器时钟
页数 文件大小 规格书
16页 150K
描述
8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

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MC-458CA721ESA-A10 技术参数

生命周期：Obsolete包装说明：DIMM, DIMM144,32
Reach Compliance Code：unknown风险等级：5.84
Is Samacsys：N最长访问时间：6 ns
最大时钟频率 (fCLK)：100 MHzI/O 类型：COMMON
JESD-30 代码：R-PDMA-N144内存密度：603979776 bit
内存集成电路类型：SYNCHRONOUS DRAM MODULE内存宽度：72
端子数量：144字数：8388608 words
字数代码：8000000最高工作温度：70 °C
最低工作温度：组织：8MX72
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：DIMM封装等效代码：DIMM144,32
封装形状：RECTANGULAR封装形式：MICROELECTRONIC ASSEMBLY
电源：3.3 V认证状态：Not Qualified
刷新周期：4096最大待机电流：0.0025 A
子类别：DRAMs最大压摆率：1.1 mA
标称供电电压 (Vsup)：3.3 V表面贴装：NO
技术：CMOS温度等级：COMMERCIAL
端子形式：NO LEAD端子节距：0.8 mm
端子位置：DUALBase Number Matches：1

MC-458CA721ESA-A10 数据手册

 浏览型号MC-458CA721ESA-A10的Datasheet PDF文件第2页浏览型号MC-458CA721ESA-A10的Datasheet PDF文件第3页浏览型号MC-458CA721ESA-A10的Datasheet PDF文件第4页浏览型号MC-458CA721ESA-A10的Datasheet PDF文件第5页浏览型号MC-458CA721ESA-A10的Datasheet PDF文件第6页浏览型号MC-458CA721ESA-A10的Datasheet PDF文件第7页 
DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-458CA721ESA,458CA721PSA,458CA721XSA  
8M-WORD BY 72-BIT  
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)  
Description  
The MC-458CA721ESA, MC-458CA721PSA and 458CA721XSA are 8,388,608 words by 72 bits synchronous  
dynamic RAM module (Small Outline DIMM) on which 5 pieces of 128M SDRAM: µPD45128163 are assembled.  
These modules provide high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
• 8,388,608 words by 72 bits organization (ECC type)  
• Clock frequency and access time from CLK  
Part number  
/CAS latency  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
Clock frequency (MAX.)  
125 MHz  
Access time from CLK (MAX.)  
MC-458CA721ESA-A80  
6 ns  
6 ns  
6 ns  
7 ns  
6 ns  
6 ns  
6 ns  
7 ns  
6 ns  
6 ns  
6 ns  
7 ns  
100 MHz  
MC-458CA721ESA-A10  
MC-458CA721PSA-A80  
MC-458CA721PSA-A10  
MC-458CA721XSA-A80  
MC-458CA721XSA-A10  
100 MHz  
77 MHz  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge  
• Pulsed interface  
• Possible to assert random column address in every cycle  
• Quad internal banks controlled by BA0, BA1 (Bank Select)  
• Programmable burst-length (1, 2, 4, 8 and Full Page)  
• Programmable wrap sequence (Sequential / Interleave)  
• Programmable /CAS latency (2, 3)  
• Automatic precharge and controlled precharge  
• CBR (Auto) refresh and self refresh  
• Single 3.3V ± 0.3V power supply  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for  
availability and additional information.  
Document No. E0067N10 (1st edition)  
This product became EOL in September, 2002.  
(Previous No. M14494EJ3V0DS00)  
Date Published January 2001 CP (K)  
Printed in Japan  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  
1234567...16

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MC-458CA721PSA NEC

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 		8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-458CA721PSA ELPIDA

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 		8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CA721PSA-A10 NEC

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 		8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-458CA721PSA-A10 ELPIDA

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 		8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CA721PSA-A80 NEC

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 		8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-458CA721PSA-A80 ELPIDA

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 		8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CA721XSA ELPIDA

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 		8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CA721XSA-A10 ELPIDA

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 		8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

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