MC-4516CD641XS-A10

更新时间： 2024-11-18 07:03:15

品牌	Logo	应用领域
尔必达 - ELPIDA		/
页数	文件大小	规格书
16页	148K
描述
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MC-4516CD641XS-A10 数据手册

浏览型号MC-4516CD641XS-A10的Datasheet PDF文件第2页

浏览型号MC-4516CD641XS-A10的Datasheet PDF文件第3页

浏览型号MC-4516CD641XS-A10的Datasheet PDF文件第4页

浏览型号MC-4516CD641XS-A10的Datasheet PDF文件第5页

浏览型号MC-4516CD641XS-A10的Datasheet PDF文件第6页

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4516CD641ES,4516CD641PS,4516CD641XS

16M-WORD BY 64-BIT

SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

Description

The MC-4516CD641ES, MC-4516CD641PS and MC-4516CD641XS are 16,777,216 words by 64 bits synchronous

dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: µPD45128163 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 16,777,216 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

/CAS latency

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

Clock frequency (MAX.)

125 MHz

Access time from CLK (MAX.)

MC-4516CD641ES-A80

6 ns

7 ns

6 ns

7 ns

6 ns

7 ns

100 MHz

MC-4516CD641ES-A10

MC-4516CD641PS-A80

MC-4516CD641PS-A10

MC-4516CD641XS-A80

MC-4516CD641XS-A10

100 MHz

77 MHz

125 MHz

100 MHz

77 MHz

125 MHz

100 MHz

77 MHz

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0, BA1 (Bank Select)

• Programmable burst-length (1, 2, 4, 8 and Full Page)

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• Single 3.3V ±0.3V power supply

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

This product became EOL in March, 2004.

Document No. E0066N10 (1st edition)

(Previous No. M14014EJ6V0DS00)

Date Published January 2001 CP (K)

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

Printed in Japan

12 3 4 5 6 7...16

中文翻译

下载PDF

与MC-4516CD641XS-A10相关器件

型号	品牌	获取价格	描述	数据表
MC-4516CD641XS-A80	ELPIDA	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD642XS	ELPIDA	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD642XS-A75	ELPIDA	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD642XS-A75L	ELPIDA	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD644F-A10	NEC	获取价格	Synchronous DRAM Module, 16MX64, 8ns, MOS, DIM-168
MC-4516CD644F-A12	NEC	获取价格	Synchronous DRAM Module, 16MX64, 9ns, MOS, DIM-168
MC-4516CD645FA-A10B	NEC	获取价格	Synchronous DRAM Module, 16MX64, 7ns, MOS, DIMM-168
MC-4516CD645LFA-A10B	NEC	获取价格	Synchronous DRAM Module, 16MX64, 7ns, MOS, DIMM-168
MC-4516CD64ES	NEC	获取价格	16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD64ES	ELPIDA	获取价格	16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

与MC-4516CD641XS-A10相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

MC-4516CD641XS-A10

MC-4516CD641XS-A10 数据手册

与MC-4516CD641XS-A10相关器件

与MC-4516CD641XS-A10相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MC-4516CD641XS-A10

MC-4516CD641XS-A10 数据手册

与MC-4516CD641XS-A10相关器件

与MC-4516CD641XS-A10相关文章

您还可以找

您在本页遇到什么问题？