5秒后页面跳转
MC-4516CD645FA-A10B PDF预览

MC-4516CD645FA-A10B

更新时间: 2024-11-18 21:01:35
品牌 Logo 应用领域
日电电子 - NEC 动态存储器
页数 文件大小 规格书
16页 143K
描述
Synchronous DRAM Module, 16MX64, 7ns, MOS, DIMM-168

MC-4516CD645FA-A10B 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:,针数:168
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.32风险等级:5.84
访问模式:FOUR BANK PAGE BURST最长访问时间:7 ns
JESD-30 代码:R-XDMA-N168内存密度:1073741824 bit
内存集成电路类型:SYNCHRONOUS DRAM MODULE内存宽度:64
功能数量:1端口数量:1
端子数量:168字数:16777216 words
字数代码:16000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16MX64封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
认证状态:Not Qualified最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:MOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子位置:DUALBase Number Matches:1

MC-4516CD645FA-A10B 数据手册

 浏览型号MC-4516CD645FA-A10B的Datasheet PDF文件第2页浏览型号MC-4516CD645FA-A10B的Datasheet PDF文件第3页浏览型号MC-4516CD645FA-A10B的Datasheet PDF文件第4页浏览型号MC-4516CD645FA-A10B的Datasheet PDF文件第5页浏览型号MC-4516CD645FA-A10B的Datasheet PDF文件第6页浏览型号MC-4516CD645FA-A10B的Datasheet PDF文件第7页 
DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-4516CD645  
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE  
UNBUFFERED TYPE  
Description  
The MC-4516CD645 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of  
64M SDRAM: µPD4564841 (Rev. E) are assembled.  
This module provides high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
16,777,216 words by 64 bits organization  
Clock frequency and clock access time  
Family  
/CAS latency  
Clock frequency  
(MAX.)  
Clock access time  
Power consumption (MAX.)  
(MAX.)  
7 ns  
Active  
Standby  
28.8 mW  
MC-4516CD645-A10B  
CL = 3  
CL = 2  
100 MHz  
4,032 mW  
3,744 mW  
67 MHz  
8 ns  
(CMOS level input)  
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge  
Pulsed interface  
Possible to assert random column address in every cycle  
Quad internal banks controlled by BA0 and BA1 (Bank Select)  
Programmable burst-length: 1, 2, 4, 8 and full page  
Programmable wrap sequence (sequential / interleave)  
Programmable /CAS latency (2, 3)  
Automatic precharge and controlled precharge  
CBR (Auto) refresh and self refresh  
All DQs have 10 Ω ± 10 % of series resistor  
Single 3.3 V ± 0.3 V power supply  
LVTTL compatible  
4,096 refresh cycles / 64 ms  
Burst termination by Burst stop command and Precharge command  
168-pin dual in-line memory module (Pin pitch = 1.27 mm)  
Unbuffered type  
Serial PD  
The information in this document is subject to change without notice.  
Document No. M13318EJ3V0DS00 (3rd edition)  
Date Published August 1998 NS CP (K)  
Printed in Japan  
The mark shows major revised points.  
1998  
©

与MC-4516CD645FA-A10B相关器件

型号 品牌 获取价格 描述 数据表
MC-4516CD645LFA-A10B NEC

获取价格

Synchronous DRAM Module, 16MX64, 7ns, MOS, DIMM-168
MC-4516CD64ES NEC

获取价格

16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD64ES ELPIDA

获取价格

16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD64ES-A10B ELPIDA

获取价格

16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD64ES-A10B NEC

获取价格

16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD64ES-A10BL NEC

获取价格

暂无描述
MC-4516CD64PS NEC

获取价格

16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD64PS ELPIDA

获取价格

16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD64PS-A10B ELPIDA

获取价格

16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD64PS-A10B NEC

获取价格

16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM