Datasheet > 存储 > DRAM> MC-4516CD641PS-A80

MC-4516CD641PS-A80

更新时间： 2024-02-01 21:45:13

品牌	Logo	应用领域
日电电子 - NEC		存储内存集成电路动态存储器
页数	文件大小	规格书
16页	151K
描述
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

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中文翻译

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技术参数
数据手册

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MC-4516CD641PS-A80 技术参数

生命周期：	Obsolete	零件包装代码：	MODULE
包装说明：	,	针数：	144
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.32	风险等级：	5.84
访问模式：	FOUR BANK PAGE BURST	最长访问时间：	6 ns
其他特性：	AUTO/SELF REFRESH	JESD-30 代码：	R-XDMA-N144
内存密度：	1073741824 bit	内存集成电路类型：	SYNCHRONOUS DRAM MODULE
内存宽度：	64	功能数量：	1
端口数量：	1	端子数量：	144
字数：	16777216 words	字数代码：	16000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	16MX64
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	MICROELECTRONIC ASSEMBLY	认证状态：	Not Qualified
自我刷新：	YES	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	3 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	NO	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	NO LEAD
端子位置：	DUAL	Base Number Matches：	1

MC-4516CD641PS-A80 数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4516CD641ES, 4516CD641PS

16M-WORD BY 64-BIT

SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

Description

The MC-4516CD641ES and MC-4516CD641PS are 16,777,216 words by 64 bits synchronous dynamic RAM

module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: µPD45128163 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 16,777,216 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

/CAS latency

CL = 3

Clock frequency (MAX.)

125 MHz

Access time from CLK (MAX.)

MC-4516CD641ES-A80

6 ns

7 ns

6 ns

7 ns

CL = 2

100 MHz

MC-4516CD641ES-A10

MC-4516CD641PS-A80

MC-4516CD641PS-A10

CL = 3

100 MHz

CL = 2

77 MHz

★

CL = 3

125 MHz

CL = 2

100 MHz

CL = 3

100 MHz

CL = 2

77 MHz

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0, BA1 (Bank Select)

• Programmable burst-length (1, 2, 4, 8 and Full Page)

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• Single 3.3V ±0.3V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination by Burst Stop command and Precharge command

• 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M14014EJ5V0DS00 (5th edition)

Date Published February 2000 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1999

12 3 4 5 6 7...16

中文翻译

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与MC-4516CD641PS-A80相关器件

型号	品牌	获取价格	描述	数据表
MC-4516CD641XS	ELPIDA	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD641XS-A10	ELPIDA	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD641XS-A80	ELPIDA	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD642XS	ELPIDA	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD642XS-A75	ELPIDA	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD642XS-A75L	ELPIDA	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD644F-A10	NEC	获取价格	Synchronous DRAM Module, 16MX64, 8ns, MOS, DIM-168
MC-4516CD644F-A12	NEC	获取价格	Synchronous DRAM Module, 16MX64, 9ns, MOS, DIM-168
MC-4516CD645FA-A10B	NEC	获取价格	Synchronous DRAM Module, 16MX64, 7ns, MOS, DIMM-168
MC-4516CD645LFA-A10B	NEC	获取价格	Synchronous DRAM Module, 16MX64, 7ns, MOS, DIMM-168

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