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MC-4516CD641ES-A80 PDF预览

MC-4516CD641ES-A80

更新时间： 2024-01-02 06:53:33
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路动态存储器时钟
页数 文件大小 规格书
16页 148K
描述
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

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MC-4516CD641ES-A80 技术参数

生命周期：Obsolete包装说明：DIMM, DIMM144,32
Reach Compliance Code：unknown风险等级：5.84
最长访问时间：6 ns最大时钟频率 (fCLK)：125 MHz
I/O 类型：COMMONJESD-30 代码：R-PDMA-N144
内存密度：1073741824 bit内存集成电路类型：SYNCHRONOUS DRAM MODULE
内存宽度：64端子数量：144
字数：16777216 words字数代码：16000000
最高工作温度：70 °C最低工作温度：
组织：16MX64输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：DIMM
封装等效代码：DIMM144,32封装形状：RECTANGULAR
封装形式：MICROELECTRONIC ASSEMBLY电源：3.3 V
认证状态：Not Qualified刷新周期：4096
最大待机电流：0.004 A子类别：DRAMs
最大压摆率：1 mA标称供电电压 (Vsup)：3.3 V
表面贴装：NO技术：CMOS
温度等级：COMMERCIAL端子形式：NO LEAD
端子节距：0.8 mm端子位置：DUAL
Base Number Matches：1

MC-4516CD641ES-A80 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-4516CD641ES,4516CD641PS,4516CD641XS  
16M-WORD BY 64-BIT  
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)  
Description  
The MC-4516CD641ES, MC-4516CD641PS and MC-4516CD641XS are 16,777,216 words by 64 bits synchronous  
dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: µPD45128163 are assembled.  
These modules provide high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
• 16,777,216 words by 64 bits organization  
• Clock frequency and access time from CLK  
Part number  
/CAS latency  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
Clock frequency (MAX.)  
125 MHz  
Access time from CLK (MAX.)  
MC-4516CD641ES-A80  
6 ns  
6 ns  
6 ns  
7 ns  
6 ns  
6 ns  
6 ns  
7 ns  
6 ns  
6 ns  
6 ns  
7 ns  
100 MHz  
MC-4516CD641ES-A10  
MC-4516CD641PS-A80  
MC-4516CD641PS-A10  
MC-4516CD641XS-A80  
MC-4516CD641XS-A10  
100 MHz  
77 MHz  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge  
• Pulsed interface  
• Possible to assert random column address in every cycle  
• Quad internal banks controlled by BA0, BA1 (Bank Select)  
• Programmable burst-length (1, 2, 4, 8 and Full Page)  
• Programmable wrap sequence (Sequential / Interleave)  
• Programmable /CAS latency (2, 3)  
• Automatic precharge and controlled precharge  
• CBR (Auto) refresh and self refresh  
• Single 3.3V ±0.3V power supply  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for  
availability and additional information.  
This product became EOL in March, 2004.  
Document No. E0066N10 (1st edition)  
(Previous No. M14014EJ6V0DS00)  
Date Published January 2001 CP (K)  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  
Printed in Japan  
1234567...16

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与MC-4516CD641ES-A80相关器件

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MC-4516CD641ES-A80L NEC

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MC-4516CD641PS ELPIDA

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 		16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD641PS NEC

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 		16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD641PS-A10 NEC

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 		16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD641PS-A10 ELPIDA

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 		16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD641PS-A80 ELPIDA

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 		16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD641PS-A80 NEC

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 		16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD641XS ELPIDA

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 		16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD641XS-A10 ELPIDA

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 		16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD641XS-A80 ELPIDA

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 		16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

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