Datasheet > MBRF3045CTR

MBRF3045CTR

更新时间： 2024-11-18 00:56:47

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	541K
描述
30.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRF3045CTR 数据手册

MBRF3035CTR thru MBRF30200CTR

Pb Free Plating Product

30.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

ITO-220AB

Unit : inch (mm)

Features

ꢀ

Standard MBR matured technology with high reliablity

Low forward voltage drop

.189(4.8)

.165(4.2)

.406(10.3)

.381(9.7)

.134(3.4)

.118(3.0)

.130(3.3)

.114(2.9)

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,SMPS,EPS and UPS

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

Car Audio Amplifiers and Sound Device Systems

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.032(.8)

MAX

Mechanical Data

(2.55)

ꢀ

Case: Fully Isolated Molding TO-220F Full Plastic Pak

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

(2.55)

Case

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.0 gram approximately

Doubler

Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Series

Negative

Common Cathode Common Anode

Suffix "CT" Suffix "CTR"

Positive

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF

PARAMETER

SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 UNIT

CTR

100

CTR

150

105

150

CTR

200

140

200

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

I_RRM

200

Peak repetitive reverse surge current (Note 1)

0.5

Maximum instantaneous forward voltage (Note 2)

I_F=15A, T_J=25℃

0.70

0.75

0.84

0.95

I_F=15A, T_J=125℃

V_F

0.60

0.82

0.73

0.65

0.90

0.78

0.70

0.94

0.82

0.80

1.05

0.92

I_F=30A, T_J=25℃

I_F=30A, T_J=125℃

0.2

Maximum reverse current @ rated VR T_J=25 ℃

I_R

T_J=125 ℃

Voltage rate of change (Rated V_R)

Typical thermal resistance

10000

dV/dt

R_θJC

T_J

V/μs

℃

Operating junction temperature range

Storage temperature range

- 55 to +150

℃

T_STG

℃

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Rev.07C

Page 1/2

http://www.thinkisemi.com/

中文翻译

下载PDF

与MBRF3045CTR相关器件

型号	品牌	获取价格	描述	数据表
MBRF3045CT-Y	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBRF3050CT	TSC	获取价格	Isolated 30.0 AMPS. Schottky Barrier Rectifiers
MBRF3050CT	TGS	获取价格	TO-220F Plastic-Encapsulate Diodes
MBRF3050CT	MDD	获取价格	SCHOTTKY BARRIER RECTIFIER
MBRF3050CTR	THINKISEMI	获取价格	30.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers
MBRF3060CT	TSC	获取价格	Isolated 30.0 AMPS. Schottky Barrier Rectifiers
MBRF3060CT	TGS	获取价格	TO-220F Plastic-Encapsulate Diodes
MBRF3060CT	LGE	获取价格	Schottky Barrier Rectifiers
MBRF3060CT	MDD	获取价格	SCHOTTKY BARRIER RECTIFIER
MBRF3060CT	SWST	获取价格	肖特基整流管

与MBRF3045CTR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

35

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF3045CTR

MBRF3045CTR 数据手册

与MBRF3045CTR相关器件

与MBRF3045CTR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF3045CTR

MBRF3045CTR 数据手册

与MBRF3045CTR相关器件

与MBRF3045CTR相关文章

您还可以找

您在本页遇到什么问题？