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MBRF3060CT PDF预览

MBRF3060CT

更新时间： 2024-11-17 04:41:03
品牌 Logo 应用领域
TSC 二极管局域网
页数 文件大小 规格书
2页 207K
描述
Isolated 30.0 AMPS. Schottky Barrier Rectifiers

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中文翻译

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MBRF3060CT 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.39Is Samacsys：N
其他特性：FREE WHEELING DIODE, LOW POWER LOSS, UL RECOGNIZED应用：EFFICIENCY
外壳连接：ISOLATED配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3最大非重复峰值正向电流：200 A
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最低工作温度：-65 °C最大输出电流：15 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT认证状态：Not Qualified
最大重复峰值反向电压：60 V表面贴装：NO
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
Base Number Matches：1

MBRF3060CT 数据手册

 浏览型号MBRF3060CT的Datasheet PDF文件第2页 
MBRF3035CT - MBRF30150CT  
Isolated 30.0 AMPS. Schottky Barrier Rectifiers  
ITO-220AB  
Features  
ꢀ
Plastic material used carries Underwriters Laboratory  
Classifications 94V-0  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
Guardring for overvoltage protection  
ꢀ
ꢀ
High temperature soldering guaranteed:  
o
260 C/10 seconds,0.25”(6.35mm)from case  
Mechanical Data  
ꢀ
ꢀ
Cases: ITO-220AB molded plastic body  
Terminals: Pure tin plated, lead free. solderable per  
MIL-STD-750, Method 2026  
ꢀ
ꢀ
ꢀ
ꢀ
Polarity: As marked  
Dimensions in inches and (millimeters)  
Mounting position: Any  
Mounting torque: 5 in-lbs. Max.  
Weight: 0.08 ounce, 2.24 grams  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
C ambient temperature unless otherwise specified.  
MBRF MBRF MBRF MBRF MBRF MBRF MBRF  
Symbol  
Type Number  
Units  
3035 3045 3050 3060 3090 30100 30150  
CT  
35  
24  
35  
CT  
45  
31  
45  
CT  
50  
35  
50  
CT  
60  
42  
60  
CT  
90  
63  
90  
CT  
100 150  
70 105  
100 150  
CT  
Maximum Recurrent Peak Reverse Voltage  
Maximum Working Peak Reverse Voltage  
Maximum DC Blocking Voltage  
V
V
V
VRRM  
VRMS  
VDC  
Maximum Average Forward Rectified Current at  
o
30  
15  
TC=130 C  
Total device  
Per Leg  
A
A
I(AV)  
Peak Repetitive Forward Current Per leg (Rated VR,  
o
30  
IFRM  
IFSM  
IRRM  
Square Wave, 20KHz) at Tc=130 C  
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load (JEDEC  
method )  
200  
A
A
Peak Repetitive Reverse Surge Current (Note 1)  
1.0  
0.5  
Maximum Instantaneous Forward Voltage at (Note 2)  
o
IF=15A, Tc=25 C  
o
0.75  
0.70  
0.84  
0.70  
0.94  
0.82  
0.95  
0.80  
1.05  
0.92  
IF=15A, Tc=125 C  
0.65  
－
V
VF  
0.60  
0.82  
0.73  
o
IF=30A, Tc=25 C  
o
IF=30A, Tc=125 C  
－
Maximum Instantaneous Reverse Current  
o
@ Tc=25 C at Rated DC Blocking Voltage Per Leg  
0.2  
20  
0.2  
15  
0.2  
10  
mA  
mA  
IR  
o
@ Tc=125 C (Note 2)  
Voltage Rate of Change, (Rated VR)  
Typical Junction Capacitance  
1,000  
V/uS  
dV/dt  
580  
480  
360  
1.5  
pF  
Cj  
o
Maximum Thermal Resistance Per Leg (Note 3)  
Operating Junction Temperature Range  
Storage Temperature Range  
1.0  
C/W  
R
θJC  
o
C
TJ  
-65 to +150  
-65 to +175  
o
C
TSTG  
Notes:  
1. 2.0us Pulse Width, f=1.0 KHz  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle  
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plate.  
Version: B07  
12

中文翻译

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