Datasheet > MBRF3080CT

MBRF3080CT

更新时间： 2024-12-01 02:54:23

品牌	Logo	应用领域
辰达行 - MDD		局域网二极管
页数	文件大小	规格书
2页	588K
描述
SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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MBRF3080CT 数据手册

MBRF3020CT THRU MBRF30100CT

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 30.0 Amperes

ITO-220AB

FEATURES

4.5± 0.2

10.2± 0.2

+0.2

-0.1

High surge capacity.

3.1

For use in low voltage, high frequency inverters,free

wheeling,and polarity protection applications.

Metal silicon junction,majority carrier conduction.

High current capability,low forward voltage drop.

Guard ring for over voltage protection.

4.0± 0.3

2.6± 0.2

1.4± 0.1

0.6± 0.1

MECHANICAL DATA

Case: ITO-220AB molded plastic body

Terminals: Leads solderable per MIL-STD-750,

Method 2026

0.6± 0.1

2.6± 0.15

PIN 2

CASE

PIN 1

PIN 3

Polarity: As marked

Mounting Position: Any

Weight:0.060 ounce, 1.67 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

MBRF MBRF MBRF MBRF

3070CT 3080CT 3090CT 30100CT

MBRF MBRF MBRF MBRF MBRF MBRF

3020CT 3030CT 3040CT 3045CT 3050CT 3060CT

SYMBOLS

MDD Catalog

Number

UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VOLTS

20 30

14 21

20 30

40 45 50

28 32 35

40 45 50

60 70 80 90 100

42 49 56 63 70

60 70 80 90 100

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

(see fig.1)

I(AV)

30.0

Amps

Peak forward surge current

IFSM

250.0

0.75

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

0.55

0.85

Maximum instantaneous forward voltage at 15.0A

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

1.0

TA=100 C

15.0

750

50.0

500

Typical junction capacitance (NOTE 1)

C/W

Typical thermal resistance (NOTE 2)

Operating junction temperature range

RθJC

2.0

-55 to +125

-55 to +150

Storage temperature range

TSTG

-55 to +150

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to case

中文翻译

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