Datasheet > MBRF3065CT

MBRF3065CT

更新时间： 2024-11-18 17:15:27

品牌	Logo	应用领域
德昌 - TC		/
页数	文件大小	规格书
3页	84K
描述
TO-220

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中文翻译

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数据手册

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MBRF3065CT 数据手册

TAK CHEONG^®

SEMICONDUCTOR

30A SCHOTTKY BARRIER DIODE

Full Pack Schottky Rectifier

Specification Features:

TO-220FP

Low Forward Voltage Drop

Low Power Loss and High Efficiency

Guard Ring for Over-voltage Protection

High Surge Capability

L = Tak Cheong Logo

xxyy = Monthly Date Code

Line 2 = MBRF

Line 3 = 3065CT

Line 4 = Polarity

L xxyy

Line 2

Line 3

Line 4

RoHS Compliant

Matte Tin(Sn) Lead Finish

Terminal Leads Surface is Corrosion Resistant

and can withstand to 260°C Wave Soldering or

per MIL-STD-750, Method 2026.

1. Anode

3. Anode

2. Cathode

MAXIMUM RATINGS (Per Leg, unless otherwise specified )

Symbol

Parameter

Value

Units

V_RRM

V_RWM

V_R

Maximum Repetitive Reverse Voltage

Working Peak Reverse Voltage

Maximum DC Reverse Voltage

Average Rectified Forward Current

Per Leg

I_F(AV)

Per Package

Peak Forward Surge Current, 8.3mS

Single Phase @ Rated Load

I_FSM

200

T_STG

T_J

Storage Temperature Range

-40 to +150

+150

°C

Operating Junction Temperature

These ratings are limiting values above which the serviceability of the diode may be impaired.

THERMAL CHARACTERISTIC

Symbol

Parameter

Value

Units

Maximum Thermal Resistance,

Junction-to-Case

1.5

°C/W

R_θJC

ELECTRICAL CHARACTERISTICS ^{(Per Leg)}

T_A= 25°C unless otherwise noted

Limits

Test Condition

Symbol

Parameter

Units

(Note 1)

Min

---

Max

I_R

Reverse Current

Forward Voltage

@ rated V_R

I_F= 15A

1.5

V_F

---

0.64

Note/s:

1. Tested under pulse condition of 300μS.

Number: DB-251

February 2014, Revision A

Page 1

12 3

中文翻译

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