MBRF3035CTR thru MBRF30200CTR
Pb
MBRF3035CTR thru MBRF30200CTR
Pb Free Plating Product
30.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers
ITO-220AB
Unit : inch (mm)
Features
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Standard MBR matured technology with high reliablity
Low forward voltage drop
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.130(3.3)
.114(2.9)
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
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Plating Power Supply,SMPS,EPS and UPS
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
Car Audio Amplifiers and Sound Device Systems
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
(2.55)
.1
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Case: Fully Isolated Molding TO-220F Full Plastic Pak
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
(2.55)
Case
Case
Case
Case
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Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Doubler
Tandem Polarity Tandem Polarity
Suffix "CTD" Suffix "CTS"
Series
Negative
Common Cathode Common Anode
Suffix "CT" Suffix "CTR"
Positive
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
PARAMETER
SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 UNIT
CTR
35
CTR
45
CTR
50
CTR
60
CTR
90
CTR
100
70
CTR
150
105
150
CTR
200
140
200
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
V
V
V
A
24
31
35
42
63
Maximum DC blocking voltage
35
45
50
60
90
100
Maximum average forward rectified current
IF(AV)
30
30
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
IRRM
200
A
A
Peak repetitive reverse surge current (Note 1)
1
0.5
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25℃
0.70
0.75
0.84
0.95
IF=15A, TJ=125℃
VF
0.60
0.82
0.73
0.65
0.90
0.78
0.70
0.94
0.82
0.80
1.05
0.92
V
IF=30A, TJ=25℃
IF=30A, TJ=125℃
0.2
Maximum reverse current @ rated VR TJ=25 ℃
IR
mA
TJ=125 ℃
20
15
10
Voltage rate of change (Rated VR)
Typical thermal resistance
10000
4
dV/dt
RθJC
TJ
V/μs
℃
/W
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
℃
TSTG
℃
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
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