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MBRF3045CT-Y PDF预览

MBRF3045CT-Y

更新时间: 2024-11-18 01:01:35
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Dual Common Cathode Schottky Rectifier

MBRF3045CT-Y 数据手册

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MBRF3045CT-Y thru MBRF30200CT-Y  
Taiwan Semiconductor  
CREAT BY ART  
Dual Common Cathode Schottky Rectifier  
FEATURES  
- Low power loss, high efficiency  
- Guardring for overvoltage protection  
- High surge current capability  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
MECHANICAL DATA  
ITO-220AB  
Case: ITO-220AB  
Molding compound, UL flammability classification rating 94V-0  
Packing code with suffix "G" means green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test  
Polarity: As marked  
Mounting torque: 0.56 Nm max.  
Weight: 1.7 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
MBRF  
3045  
CT-Y  
MBRF  
3060  
CT-Y  
MBRF  
3080  
CT-Y  
MBRF  
MBRF  
30100  
CT-Y  
MBRF  
30150  
CT-Y  
MBRF  
30200 UNIT  
CT-Y  
PARAMETER  
SYMBOL  
MBRF  
3045CT  
MBRF  
3060CT  
MBRF  
MBRF  
MBRF  
Marking code  
3080CT 30100CT 30150CT 30200CT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
45  
31  
45  
60  
42  
60  
80  
56  
80  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
IF(AV)  
30  
30  
Peak repetitive forward current  
(Rated VR, Square wave, 20KHz)  
IFRM  
A
Peak forward surge current, 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
IRRM  
200  
A
A
Peak repetitive reverse surge current (Note 1)  
1
0.5  
Maximum instantaneous forward voltage (Note 2)  
IF=15A, TJ=25°C  
0.85  
0.72  
0.94  
0.82  
0.2  
0.95  
0.80  
1.05  
0.92  
0.70  
0.60  
0.82  
0.73  
0.78  
0.68  
0.90  
0.78  
IF=15A, TJ=125°C  
VF  
V
IF=30A, TJ=25°C  
IF=30A, TJ=125°C  
Maximum reverse current @ rated VR TJ=25 °C  
TJ=125 °C  
IR  
mA  
10  
40  
15  
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
4
dV/dt  
RθJC  
TJ  
V/μs  
°C/W  
°C  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: tp = 2.0 μs, 1.0KHz  
Note 2: Pulse test with PW=300μs, 1% duty cycle  
Document Number: DS_D1411035  
Version: D14  

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