Datasheet > MBRF3050CT

MBRF3050CT

更新时间： 2024-11-17 12:03:47

品牌	Logo	应用领域
TGS		二极管
页数	文件大小	规格书
2页	449K
描述
TO-220F Plastic-Encapsulate Diodes

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数据手册

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MBRF3050CT 数据手册

TIGER ELECTRONIC CO.,LTD

TO-220F Plastic-Encapsulate Diodes

MBRF3030, 35, 40, 45, 50CT

SCHOTTKY BARRIER RECTIFIER

TO-220F

1. ANODE

2. CATHODE

3. ANODE

FEATURES

z Schottky Barrier Chip

z Guard Ring Die Construction for Transient Protection

z Low Power Loss,High Efficiency

z High Surge Capability

z High Current Capability and Low Forward Voltage Drop

z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

and Polarity Protection Applications

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Value

Unit

Symbol

Parameter

MBRF30

30CT

35CT

40CT

45CT

50CT

Peak repetitive reverse voltage

Working peak reverse voltage

DC blocking voltage

V_RRM

V_RWM

V_R

V_R(RMS)

I_O

RMS reverse voltage

24.5

31.5

Average rectified output current

Non-Repetitive peak forward surge current

8.3ms half sine wave

I_FSM

200

P_D

R_ΘJA

T_j

Power dissipation

℃/W

℃

Thermal resistance from junction to ambient

Junction temperature

125

T_stg

Storage temperature

-55~+150

℃

B,Apr,2013

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