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MBRF20150D PDF预览

MBRF20150D

更新时间： 2024-11-18 11:11:27
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
2页 162K
描述
20.0AMPS Isolated Schottky Barrier Rectifier

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中文翻译

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MBRF20150D 技术参数

生命周期：Obsolete包装说明：R-PSFM-T3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.25
其他特性：FREE WHEELING DIODE, LOW POWER LOSS应用：EFFICIENCY
外壳连接：ISOLATED配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3最大非重复峰值正向电流：150 A
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最低工作温度：-65 °C最大输出电流：10 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT认证状态：Not Qualified
最大重复峰值反向电压：150 V表面贴装：NO
技术：SCHOTTKY端子面层：PURE TIN
端子形式：THROUGH-HOLE端子位置：SINGLE
Base Number Matches：1

MBRF20150D 数据手册

 浏览型号MBRF20150D的Datasheet PDF文件第2页 
creat by art  
MBRF2060D - MBRF20200D  
20.0AMPS Isolated Schottky Barrier Rectifier  
ITO-220AB  
RoHS  
Pb  
COMPLIANCE  
Features  
—
Plastic material used carries Underwriters Laboratory  
Classifications 94V-0  
—
—
—
—
—
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High Surge capability  
For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications  
—
—
Guarding for overvoltage protection  
High temperature soldering guaranteed: 260℃/  
10 seconds, 0.25"(6.35mm) from case  
—
Green compound with suffix "G" on packing  
code & prefix "G" on datecode  
Mechanical Data  
—
Case: ITO-220AB molded plastic body  
Dimensions in inches and (millimeters)  
Marking Diagram  
—
Terminals: Pure tin plated, lead free, solderable  
per MIL-STD-750, Method 2026  
—
—
—
—
Polarity: As marked  
MBRF20XXD = Specific Device Code  
Mounting position: Any  
Mounting torque: 5 in-lbs. Max.  
Weight: 1.7 grams  
G
= Green compound  
= Year  
Y
WW  
= Work Week  
Maximum Ratings and Electrical Characteristics  
Rating at 25 ℃ ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBRF MBRF MBRF MBRF MBRF  
2060D 20100D 20120D 20150D 20200D  
Symbol  
Unit  
Type Number  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
60  
42  
60  
100  
70  
120  
84  
150  
105  
150  
200  
140  
200  
V
V
V
Maximum DC blocking voltage  
100  
120  
Maximum Average Forward Rectified Current  
@Tc = 135℃(Total Device)  
IF(AV)  
20  
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave  
Superimposed on Rated Load (JEDEC method)  
IFSM  
IRRM  
150  
0.5  
A
A
Peak Repetitive Reverse Surge Current  
Maximum Instantaneous Forward Voltage at (Note 1)  
IF = 10A, TA=25℃  
0.80  
0.70  
0.95  
0.85  
0.85  
0.75  
0.95  
0.85  
0.90  
0.80  
1.00  
0.90  
0.95  
0.85  
1.05  
0.95  
IF = 10A, TA=125℃  
VF  
V
IF = 20A, TA=25℃  
IF = 20A, TA=125℃  
Maximum Reverse Current at Rated DC Blocking Voltage  
TA=25 ℃  
IR  
0.1  
10  
0.1  
5
0.1  
2
mA  
mA  
TA=125 ℃  
Voltage rate of change (Rated VR)  
10,000  
3.5  
dV/dt  
RθJC  
TJ  
V/uS  
OC/W  
OC  
OC  
Maximum Thermal Resistance Per Leg (Note 2)  
Operating Temperature Range  
1.5  
-65 to + 150  
-65 to + 175  
Storage Temperature Range  
TSTG  
Note1: Pulse Test : 300us Pulse Width, 1% Duty cycle  
Note2: Thermal Resistance from Junction to Case Per Leg  
Version:A11  
12

中文翻译

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