Datasheet > MBRF20200CT

MBRF20200CT

更新时间： 2024-11-18 12:46:39

品牌	Logo	应用领域
科盛美 - KERSEMI		二极管局域网
页数	文件大小	规格书
4页	455K
描述
SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS

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MBRF20200CT 数据手册

MBRF20200CT

SWITCHMODEt

Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier

principle in a large area metal−to−silicon power diode.

State−of−the−artgeometry features epitaxial construction with oxide

passivation and metal overlay contact. Ideally suited for use as

rectifiers in very low−voltage, high−frequency switching power

supplies, free wheeling diodes and polarity protection diodes.

www.kersemi.com

SCHOTTKY BARRIER

RECTIFIER

20 AMPERES, 200 VOLTS

Features

• Highly Stable Oxide Passivated Junction

• Very Low Forward Voltage Drop

• Matched Dual Die Construction

• High Junction Temperature Capability

• High dv/dt Capability

• Guardring for Stress Protection

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Electrically Isolated. No Isolation Hardware Required.

• Pb−Free Package is Available*

ISOLATED TO−220

CASE 221D

STYLE 3

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.9 Grams (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

MARKING DIAGRAM

• Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

AYWW

B20200G

A K A

= Assembly Location

= Year

= Work Week

B20200 = Device Code

AKA

= Pb−Free Package

= Polarity Designator

ORDERING INFORMATION

Device

Package

Shipping

MBRF20200CT

TO−220

50 Units/Rail

MBRF20200CTG

TO−220

(Pb−Free)

12 3 4

中文翻译

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