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MBRF20200CTR PDF预览

MBRF20200CTR

更新时间: 2024-01-03 17:03:24
品牌 Logo 应用领域
THINKISEMI 二极管局域网
页数 文件大小 规格书
2页 504K
描述
20 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

MBRF20200CTR 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Base Number Matches:1

MBRF20200CTR 数据手册

 浏览型号MBRF20200CTR的Datasheet PDF文件第2页 
MBRF2045CTR thru MBRF20200CTR  
MBRF2045CTR/MBRF2060CTR/MBRF20100CTR/MBRF20200CTR  
Pb Free Plating Product  
20 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers  
ITO-220AB  
Unit : inch (mm)  
Features  
.189(4.8)  
.165(4.2)  
Standard MBR matured technology with high reliablity  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
Application  
.130(3.3)  
.114(2.9)  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS,EPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
Case: Fully Isolated Molding TO-220F Full Plastic Pak  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
(2.55)  
Case  
Case  
Case  
Case  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.0 gram approximately  
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "CT" Suffix "CTR"  
Positive  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
MBRF2045CTR MBRF2060CTR MBRF20100CTR MBRF20200CTR  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
45  
31  
45  
60  
42  
60  
100  
70  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
IF(AV)  
20  
20  
Peak repetitive forward current  
(Rated VR, Square Wave, 20KHz)  
IFRM  
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
IRRM  
150  
A
A
Peak repetitive reverse surge current (Note 1)  
1
0.5  
Maximum instantaneous forward voltage (Note 2)  
IF=10A, TJ=25  
-
0.80  
0.70  
0.95  
0.85  
0.85  
0.75  
0.95  
0.85  
0.99  
0.87  
1.23  
1.10  
IF=10A, TJ=125℃  
VF  
0.57  
0.84  
0.72  
V
IF=20A, TJ=25℃  
IF=20A, TJ=125℃  
0.1  
Maximum reverse current @ rated VR TJ=25  
TJ=125 ℃  
IR  
mA  
15  
10  
5
0.15  
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
dV/dt  
RθJC  
TJ  
V/μs  
°C/W  
°C  
2.5  
3.5  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: tp = 2.0 μs, 1.0KHz  
Note 2: Pulse test with PW=300μs, 1% duty cycle  
Rev.07C  
© 2006 Thinki Semiconductor Co., Ltd.  
Page 1/2  
http://www.thinkisemi.com/  

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