Datasheet > MBRF2040C

MBRF2040C

更新时间： 2024-02-05 01:08:46

品牌	Logo	应用领域
统懋 - MOSPEC		/
页数	文件大小	规格书
2页	146K
描述
Full Plastic Dual Schottky Barrier Power Rectifiers

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中文翻译

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MBRF2040C 数据手册

MOSPEC

MBRF2030C Thru MBRF2060C

Switchmode

Full Plastic Dual Schottky Barrier Power Rectifiers

SCHOTTKY BARRIER

RECTIFIERS

Using the Schottky Barrier principle with a Molybdenum barrier metal.

These state-of-the-art geometry features epitaxial construction with oxide

passivation and metal overlay contact. Ideally suited for low voltage, high

frequency rectification, or as free wheeling and polarity protection diodes.

20 AMPERES

30-60 VOLTS

Features

＊Low Forward Voltage.

＊Low Switching noise.

＊High Current Capacity

＊Guarantee Reverse Avalanche.

＊Guard-Ring for Stress Protection.

＊Low Power Loss & High efficiency.

＊175℃ Operating Junction Temperature

＊Low Stored Charge Majority Carrier Conduction.

＊Plastic Material used Carries Underwriters Laboratory

ITO-220AB

Flammability Classification 94V-O

MAXIMUM RATINGS

MBRF20

Characteristic

Symbol

Unit

30C 35C 40C 45C 50C 60C

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

RMS Reverse Voltage

V_R(RMS)21

I_F(AV)

MILLIMETERS

DIM

Average Rectifier Forward Current (per diode)

Total Device (Rated V_R), T_C=100℃

MIN

MAX

14.90

13.35

10.00

6.55

2.65

1.55

1.15

0.55

2.50

3.00

1.10

0.55

4.40

1.15

3.35

2.65

3.15

3.60

15.15

13.55

10.10

6.65

2.75

1.65

1.25

0.65

2.60

3.20

1.20

0.65

4.60

1.25

3.45

2.75

3.25

3.80

Peak Repetitive Forward Current

(Rate V_R, Square Wave, 20kHz)

I_FM

Non-Repetitive Peak Surge Current

(Surge applied at rate load conditions

halfware, single phase, 60Hz)

I_FSM

150

Operating and Storage Junction

Temperature Range

℃

T_J, T_stg

-65 to +175

THERMAL RESISTANCES

Typical Thermal Resistance junction to

case (per diode)

℃/w

R_{θ j-c}

3.2

ELECTRIAL CHARACTERISTICS

MBRF20

Characteristic

Symbol

Unit

30C 35C 40C 45C 50C 60C

Maximum Instantaneous Forward Voltage

( I_F=10 Amp T_C= 25℃) (per diode)

( I_F=10 Amp T_C= 125℃)

V_F

0.75

0.66

0.80

0.72

Maximum Instantaneous Reverse Current

( Rated DC Voltage, T_C= 25℃)

( Rated DC Voltage, T_C= 125℃)

I_R

0.01

中文翻译

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