Datasheet > MBRF20200T-Y

MBRF20200T-Y

更新时间： 2024-11-19 01:04:59

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	231K
描述
Dual Common Cathode Schottky Rectifier

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中文翻译

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数据手册

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MBRF20200T-Y 数据手册

MBRF2045CT-Y thru MBRF20200CT-Y

Taiwan Semiconductor

CREAT BY ART

Dual Common Cathode Schottky Rectifier

FEATURES

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

MECHANICAL DATA

ITO-220AB

Case: ITO-220AB

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - green compound (halogen-free)

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Polarity: As marked

Mounting torque: 5 in-lbs maximum

Weight: 1.7 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

MBRF

SYMBOL 2045

CT-Y

MBRF

2060

CT-Y

MBRF

20100

CT-Y

MBRF

20150

CT-Y

MBRF

20200 UNIT

CT-Y

PARAMETER

MBRF

Marking code

2045CT 2060CT 20100CT 20150CT 20200CT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

I_RRM

150

Peak repetitive reverse surge current (Note 1)

0.5

Maximum instantaneous forward voltage (Note 2)

I_F= 10 A, T_J=25℃

0.95

0.85

1.05

0.95

0.80

0.57

0.84

0.72

0.80

0.70

0.95

0.85

0.75

0.95

0.85

0.1

I_F= 10 A, T_J=125℃

V_F

I_F= 20 A, T_J=25℃

I_F= 20 A, T_J=125℃

Maximum reverse current @ rated VR T_J=25 ℃

T_J=125 ℃

I_R

Voltage rate of change (Rated V_R)

10000

dV/dt

V_AC

V/μs

Isolation voltage from

terminals to heatsink with t=1.0 min

1500

^OC/W

^OC

Typical thermal resistance

R_θJC

T_J

1.5

3.5

Operating junction temperature range

Storage temperature range

- 55 to +150

T_STG

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Document Number: DS_D1405040

Version: B14

12 3 4

中文翻译

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