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MBRF2035 PDF预览

MBRF2035

更新时间： 2024-11-18 04:41:03
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
2页 210K
描述
Isolated 20.0 AMPS. Schottky Barrier Rectifiers

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中文翻译

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MBRF2035 技术参数

生命周期：Active包装说明：ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.51
其他特性：FREE WHEELING DIODE, LOW POWER LOSS应用：EFFICIENCY
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：TO-220ACJESD-30 代码：R-PSFM-T2
JESD-609代码：e3最大非重复峰值正向电流：150 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-65 °C最大输出电流：20 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT认证状态：Not Qualified
最大重复峰值反向电压：35 V表面贴装：NO
技术：SCHOTTKY端子面层：PURE TIN
端子形式：THROUGH-HOLE端子位置：SINGLE
Base Number Matches：1

MBRF2035 数据手册

 浏览型号MBRF2035的Datasheet PDF文件第2页 
MBRF2035 - MBRF20150  
Isolated 20.0 AMPS. Schottky Barrier Rectifiers  
ITO-220AC  
.185(4.7)  
.173(4.4)  
.406(10.3)  
.390(9.90)  
.124(3.16)  
.118(3.00)  
.134(3.4)DIA  
.113(3.0)DIA  
.112(2.85)  
.100(2.55)  
.272(6.9)  
.248(6.3)  
Features  
.606(15.5)  
.583(14.8)  
ꢀ
Plastic material used carries Underwriters Laboratory  
Classifications 94V-0  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
.063(1.6)  
MAX  
.161(4.1)  
.146(3.7)  
High current capability, low forward voltage drop  
High surge capability  
.110(2.8)  
.098(2.5)  
.543(13.8)  
.512(13.2)  
.055(1.4)  
.043(1.1)  
.071(1.8)  
MAX  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
Guardring for overvoltage protection  
High temperature soldering guaranteed:  
.030(0.76)  
.020(0.50)  
.035(0.9)  
.020(0.5)  
ꢀ
ꢀ
2
o
260 C/10 seconds,0.25”(6.35mm)from case  
.100(2.55)  
PIN 1  
PIN 2  
Case Positive  
.100(2.55)  
Mechanical Data  
CASE  
ꢀ
ꢀ
Cases: ITO-220AC molded plastic body  
Terminals: Pure tin plated, lead free. solderable per  
MIL-STD-750, Method 2026  
Dimensions in inches and (millimeters)  
ꢀ
ꢀ
ꢀ
ꢀ
Polarity: As marked  
Mounting position: Any  
Mounting torque: 5 in. - lbs. max  
Weight: 0.08 ounce, 2.24 grams  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBRF MBRF MBRF MBRF MBRF MBRF MBRF  
Symbol  
Type Number  
Units  
2035 2045 2050 2060 2090 20100 20150  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
35  
24  
35  
45  
31  
45  
50  
35  
50  
60  
42  
60  
90  
63  
90  
100  
70  
150  
105  
150  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified Current  
O
20  
40  
A
A
I(AV)  
IFRM  
at Tc=125 C  
Peak Repetitive Forward Current (Rated V , Square  
R
o
Wave, 20KHz) at Tc=125 C  
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load (JEDEC  
method )  
150  
A
A
IFSM  
IRRM  
VF  
Peak Repetitive Reverse Surge Current (Note 1)  
1.0  
0.5  
Maximum Instantaneous Forward Voltage at:  
o
(Note 2)  
IF=20A, TC=25 C  
o
0.75  
0.65  
0.82  
0.72  
0.95  
0.87  
1.02  
0.98  
V
I =20A, T =125 C  
F C  
Maximum Instantaneous Reverse Current  
o
@ Tc =25 C at Rated DC Blocking Voltage (Note2)  
o
0.2  
15  
0.2  
10  
0.1  
5.0  
mA  
mA  
IR  
@ Tc=125 C  
Voltage Rate of Change (Rated V )  
R
10,000  
V/uS  
pF  
dV/dt  
Typical Junction Capacitance  
Cj  
560  
420  
o
Maximum Typical Thermal Resistance(Note 3)  
3.0  
C/W  
R
θJC  
o
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-65 to +150  
-65 to +175  
C
o
TSTG  
C
Notes:  
1. 2.0us Pulse Width, f=1.0 KHz  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle  
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.  
Version: A06  
12

中文翻译

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