Datasheet > MBRF2035_11

MBRF2035_11

更新时间： 2024-11-18 11:11:23

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
2页	144K
描述
20.0 AMPS. Isolated Schottky Barrier Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRF2035_11 数据手册

CREAT BY ART

MBRF2035 - MBRF20100

20.0 AMPS. Isolated Schottky Barrier Rectifiers

ITO-220AC

RoHS

COMPLIANCE

Features

UL Recognized File # E-326243

Plastic material used carriers Underwriters

Laboratory Classification 94V-0

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Guard-ring for overvoltage protection

High temperature soldering guaranteed:

260℃/10 seconds, 0.25"(6.35mm) from case

Green compound with suffix "G" on packing

code & prefix "G" on datecode

Dimensions in inches and (millimeters)

Marking Diagram

Mechanical Data

Case:ITO-220AC molded plastic body

MBRF20XX

= Specific Device Code

= Green Compound

= Year

Terminals: Pure tin plated, lead free, solderable

per MIL-STD-750, Method 2026

Polarity: As marked

Mounting position:Any

Mounting torque: 5 in. - lbs, max

Weight: 1.88 grams

= Work Week

Maximum Ratings and Electrical Characteristics

Rating at 25 ℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

MBRF MBRF MBRF MBRF MBRF MBRF

2035 2045 2050 2060 2090 20100

Symbol

Unit

Type Number

Maximum Repetitive Peak Reverse Voltage

V_RRM

V_RMS

V_DC

100

Maximum RMS Voltage

Maximum DC Blocking Voltage

100

Maximum Average Forward Rectified Current

at Tc=125℃

I_F(AV)

Peak Repetitive Forward Current (Rated VR,

Square Wave, 20KHz) at Tc=125℃

I_FRM

Peak Forward Surge Current, 8.3 ms Single Half Sine-

wave Superimposed on Rated Load (JEDEC method)

I_FSM

I_RRM

V_F

150

Peak Repetitive Reverse Surge Current (Note 1)

0.5

Maximum Instantaneous Forward Voltage (Note 2)

I_F=20A, T_A=25℃

0.75

0.65

0.82

0.72

0.95

0.87

0.1

I_F=20A, T_A=125℃

0.2

Maximum Reverse Current @ Rated VR T_A=25 ℃

T _A=125 ℃

I_R

Voltage Rate of Change (Rated V_R)

Typical Junction Capacitance

10000

dV/dt

V/us

560

420

^OC/W

^OC

Typical Thermal Resistance

R_θjC

T_J

Operating Temperature Range

- 65 to + 150

Storage Temperature Range

T_STG

Note 1: 2.0uS Pulse Width, f=1.0KHz

Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle

Version:F11

中文翻译

下载PDF

与MBRF2035_11相关器件

型号	品牌	获取价格	描述	数据表
MBRF2035_13	TSC	获取价格	20.0 AMPS. Isolated Schottky Barrier Rectifiers
MBRF2035C	MOSPEC	获取价格	Full Plastic Dual Schottky Barrier Power Rectifiers
MBRF2035CT	KERSEMI	获取价格	Plastic material used carries Underwriters Laboratory Classifications 94V-0
MBRF2035CT	TSC	获取价格	Isolated 20.0 AMPS. Schottky Barrier Rectifiers
MBRF2035CT	TGS	获取价格	TO-220F Plastic-Encapsulate Diodes
MBRF2035CT	VISHAY	获取价格	SCHOTTKY ISOLATED PLASTIC RECTIFIER
MBRF2035CT	GOOD-ARK	获取价格	Dual Schottky Barrier Rectifiers
MBRF2035CT/45	VISHAY	获取价格	Rectifier Diode, Schottky, 10A, 35V V(RRM),
MBRF2035CT/45-E3	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, ITO-220AB, 3 PIN, Rectifier
MBRF2035CT_1	TSC	获取价格	Isolation 20.0 AMPS. Schottky Barrier Rectifiers

与MBRF2035_11相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF2035_11

MBRF2035_11 数据手册

与MBRF2035_11相关器件

与MBRF2035_11相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF2035_11

MBRF2035_11 数据手册

与MBRF2035_11相关器件

与MBRF2035_11相关文章

您还可以找

您在本页遇到什么问题？